AP8G02BLI Overview
Description
AP8G02BLI 20V N+P-Channel Enhancement Mode MOSFET The AP8G02BLI uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a Battery protection or in other Switching application.
Key Features
- VDS = 20V ID =8.5A RDS(ON) < 28mΩ @ VGS=4.5V （Type：24mΩ） VDS = -20V ID =-7.6A RDS(ON) < 35mΩ @ VGS=-4.5V（Type：29mΩ）
