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AP8G02BLI - 20V N+P-Channel Enhancement Mode MOSFET

Datasheet Summary

Description

The AP8G02BLI uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V.

This device is suitable for use as a Battery protection or in other Switching application.

Features

  • VDS = 20V ID =8.5A RDS(ON) < 28mΩ @ VGS=4.5V （Type：24mΩ） VDS = -20V ID =-7.6A RDS(ON) < 35mΩ @ VGS=-4.5V（Type：29mΩ）.

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Datasheet Details

Part number AP8G02BLI
Manufacturer APM
File Size 1.09 MB
Description 20V N+P-Channel Enhancement Mode MOSFET
Datasheet download datasheet AP8G02BLI Datasheet
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Full PDF Text Transcription

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Description AP8G02BLI 20V N+P-Channel Enhancement Mode MOSFET The AP8G02BLI uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features VDS = 20V ID =8.5A RDS(ON) < 28mΩ @ VGS=4.5V （Type：24mΩ） VDS = -20V ID =-7.6A RDS(ON) < 35mΩ @ VGS=-4.
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