DESCRIPTION
AP8G02BLI 20V N+P-Channel Enhancement Mode MOSFET GENERAL FEATURES
VDS = 20V ID =8.5A RDS(ON) < 28mΩ @ VGS=4.5V （Type：24mΩ） VDS = -20V ID =-7.6A RDS(ON) < 35mΩ @ VGS=-4.5V（Type：29mΩ） Application BLDC Package Marking and Ordering Information Product ID Pack AP8G02BLI SOT23-6L Marking AP8G02BLI ABSOLUTE MAXIMUM RATINGS
(TC=25℃unless otherwise noted) Symbol Parameter N-Ch P-Ch VDS Drain-Source Voltage 20 -20 VGS ID@TA=25℃ ID@TA=70℃ IDM EAS PD@TA=25℃ Gate-Source Voltage Continuous Drain Current, VGS @ 10V1 Continuous Drain Current, VGS @ 10V1 Pulsed Drain Current2 Single Pulse Avalanche Energy3 Total Power Dissipation4 ±12 ±12 8.5 -7.6 6.2 -5.3 28 -30 24 76 1.5 TSTG Storage Temperature Range -55 to 150 TJ Operating Junction Temperature Range -55 to 150 RθJA Thermal Resistance Junction-Ambient 1 125 RθJC Thermal Resistance Junction-Case1 52 Qty(PCS) 3000 Units V V A A A mJ W ℃ ℃ ℃/W ℃/W 1 AP8G02BLI REV1.0 永源微電子科技有限公司 AP8G02BLI 20V N+P-Channel Enhancement Mode MOSFET N-ELECTRICAL CHARACTERISTICS
(TJ=25℃, unless otherwise noted) Symbol Parameter Conditions Min.
APM
