LN2310 - N-Channel Enhancement Mode Field Effect Transistor

Datasheet Details

Part number	LN2310
Manufacturer	natLinear
File Size	447.71 KB
Description	N-Channel Enhancement Mode Field Effect Transistor
Datasheet	LN2310-natlinear.pdf

VDSS 30V Product Summary ID 5.8A 5A RDS(ON)(mΩ)TYP 28 @ VGS=10V 31 @ VGS=4.5V

Super high dense cell design for low RDS(ON).
Rugged and reliable.
Simple drive requirement.
SOT-23-3L package.
Package.
SOT-23-3L LN2310.
Ordering Information Part Number LN2310 Storage Temperature -55°C to +150°C.
Absolute Maximum Ratings parameter Drain-source voltage Gate-source voltage Drain current-continuousa@Tj=125℃ -pulse db Maximum power dissipation Operating junction Temperature range Package SOT-23-3L Devices Per Reel 3000 (TA=25℃ un.

📁 LN2310 Similar Datasheet

Other Datasheets by natlinear

Published: Dec 4, 2018 |