LT1N60 Datasheet | Specifications & PDF Download

X

LT1N60 N-channel MOSFET

Xi′an Longtium Microelectronics Technology Devel.

Longtium Microelectronics

LT1N60 - N-channel MOSFET

Xi′an Longtium Microelectronics Technology Developing Co., Ltd. Features  High ruggedness  RDS(ON) (Max 9 Ω)@VGS=10V  Gate Charge (Max 6nC)  Impro.
Rating: 1 (2 votes)
Since 2006. D4U Semicon.   |   Datasheet4U.com   |   Contact Us   |   Privacy Policy   |   Purchase of parts