
LT1N60 - N-channel MOSFET
Xi′an Longtium Microelectronics Technology Developing Co., Ltd.
Features
High ruggedness RDS(ON) (Max 9 Ω)@VGS=10V Gate Charge (Max 6nC) Impro
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Xi′an Longtium Microelectronics Technology Devel.
LT1N60 Distributor