LT6 Datasheet | Specifications & PDF Download

RLT65300T TECHNICAL DATA High Power Visible Laser Diode Features • Lasing Mode Structure: multi mode • Peak Wavelength : typ. 650 nm • Optical Ouput P

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RLT635-100GPD TECHNICAL DATA High Power Visible Laser Diode Features • • • • • Lasing Mode Structure: multi mode Peak Wavelength : typ. 635 nm Optica

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Public IGLT65R110B2 Preliminary datasheet CoolGaN™ BDS 650 V G5 CoolGaN™ Bidirectional switch, enhancement‑mode Infineon's CoolGaN™ Bi‑Directional Sw

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LITE-ON SEMICONDUCTOR PLASTIC SILICON RECTIFIERS LT6A01 thru LT6A07 REVERSE VOLTAGE - 50 to 1000 Volts FORWARD CURRENT - 6.0 Amperes FEATURES Low co

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FEATURES • LTE Compliant • 4th Generation HELPTM technology • High Efficiency (LTE MPR = 0 dB): • 36 % @ POUT = +27.5 dBm • 23 % @ POUT = +

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FEATURES • CDMA/EVDO, WCDMA/HSPA and LTE Compliant • 4th Generation HELPTM technology • High Efficiency (R99 waveform): • 41 % @ POUT = +28.4 d

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ROITHNER LASERTECHNIK A-1040 WIEN, FLEISCHMANNGASSE 9 TEL: +43 -1- 586 52 43 FAX: +43 -1- 586 41 43 e-mail: rlt@mcb.at http://www.roithner.mcb.at RLT

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www.DataSheet4U.com 16Mx64 bits PC133 SDRAM Unbuffered DIMM based on 8Mx16 SDRAM with LVTTL, 4 banks & 4K Refresh HYM71V16635AT6 Series DESCRIPTION

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VLT60 Series 60W single and triple output AC/DC Power Supplies The world’s top selling 60-watt convection cooled multi-output power supply. The EOS VL

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RLT635- Series, C-mount / TO-3 TECHNICAL DATA 635nm High Power Laser Diode Features • CW Output Power: 150 mW, 300 mW, 500 mW • High Reliability • Hi

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RLT635- Series, C-mount / TO-3 TECHNICAL DATA 635nm High Power Laser Diode Features • CW Output Power: 150 mW, 300 mW, 500 mW • High Reliability • Hi

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RLT650-200G TECHNICAL DATA High Power Visible Laser Diode Features • • • • Lasing Mode Structure: multi mode Peak Wavelength : typ. 650 nm Optical Ou

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Public IGLT65R035D2 Final datasheet CoolGaN™ G5 CoolGaN™ Transistor 650 V G5 Infineon’s CoolGaN™ is a highly efficient gallium nitride (GaN) transist

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Public IMLT65R050M2H Final datasheet SiC MOSFET CoolSiC™ MOSFET 650 V G2 Built on Infineon’s robust 2nd generation Silicon Carbide trench technology,

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FEATURES • HSPA, LTE Compliant • 4th Generation HELPTM technology • High Efficiency (R99 waveform): • 40 % @ POUT = +28.8 dBm • 26 % @ POUT

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ALT6705 HELP4TM UMTS800 (Bands 5, 6, 18, 19, & 26) LTE, WCDMA, CDMA Multimode PAM Data Sheet - Rev 2.5 FEATURES • Multimode (LTE, HSPA, EV-DO Compl

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ROITHNER LASERTECHNIK A-1040 WIEN, FLEISCHMANNGASSE 9 TEL: +43 -1- 586 52 43 FAX: +43 -1- 586 41 43 e-mail: rlt@mcb.at http://www.roithner.mcb.at RLT

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www.DataSheet4U.com 16Mx64 bits PC133 SDRAM Unbuffered DIMM based on 8Mx16 SDRAM with LVTTL, 4 banks & 4K Refresh HYM71V16635BT6 Series DESCRIPTION

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RLT66100MG TECHNICAL DATA High Power Red Laser Diode Features • Lasing Mode Structure: multi mode • Peak Wavelength : typ. 660 nm • Optical Ouput Powe

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