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M02N60B Matched Datasheet

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No Part Number Description Manufacture PDF
1 M02N60B N Channel MOSFET

N Channel MOSFET 2.0A M02N60B PIN CONFIGURATION FEATURE Robust High Voltage Temination. Avalanche Energy Specified Source-to Drain Diode Recovery Time Comparable to a Discrete F
Stanson Technology
Stanson Technology
M02N60B pdf






M02N60 Similar Datasheet

Part Number Description Manufacture PDF
M02N60 N Channel MOSFET

N Channel MOSFET 2.0A M02N60B PIN CONFIGURATION FEATURE Robust High Voltage Temination. Avalanche Energy Specified Source-to Drain Diode Recovery Time Comparable to a Discrete F
Stanson Technology
Stanson Technology
M02N60 datasheet
M02N60B N Channel MOSFET

N Channel MOSFET 2.0A M02N60B PIN CONFIGURATION FEATURE Robust High Voltage Temination. Avalanche Energy Specified Source-to Drain Diode Recovery Time Comparable to a Discrete F
Stanson Technology
Stanson Technology
M02N60B datasheet
M02N601D1 Silicon N-Channel Power MOSFET

N Channel MOSFET 2.0A M02N60B PIN CONFIGURATION FEATURE Robust High Voltage Temination. Avalanche Energy Specified Source-to Drain Diode Recovery Time Comparable to a Discrete F
CITC
CITC
M02N601D1 datasheet
M02N601D Silicon N-Channel Power MOSFET

N Channel MOSFET 2.0A M02N60B PIN CONFIGURATION FEATURE Robust High Voltage Temination. Avalanche Energy Specified Source-to Drain Diode Recovery Time Comparable to a Discrete F
CITC
CITC
M02N601D datasheet


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