| Part Number |
Description |
Manufacture |
PDF |
|
M02N60 |
N Channel MOSFET
N Channel MOSFET 2.0A
M02N60B
PIN CONFIGURATION
FEATURE Robust High Voltage Temination. Avalanche Energy Specified Source-to Drain Diode Recovery Time Comparable to a Discrete F |
Stanson Technology
|
|
|
M02N60B |
N Channel MOSFET
N Channel MOSFET 2.0A
M02N60B
PIN CONFIGURATION
FEATURE Robust High Voltage Temination. Avalanche Energy Specified Source-to Drain Diode Recovery Time Comparable to a Discrete F |
Stanson Technology
|
|
|
M02N601D1 |
Silicon N-Channel Power MOSFET
N Channel MOSFET 2.0A
M02N60B
PIN CONFIGURATION
FEATURE Robust High Voltage Temination. Avalanche Energy Specified Source-to Drain Diode Recovery Time Comparable to a Discrete F |
CITC
|
|
|
M02N601D |
Silicon N-Channel Power MOSFET
N Channel MOSFET 2.0A
M02N60B
PIN CONFIGURATION
FEATURE Robust High Voltage Temination. Avalanche Energy Specified Source-to Drain Diode Recovery Time Comparable to a Discrete F |
CITC
|
|
