M100 Datasheet | Specifications & PDF Download

HM100N03KA N-Channel Enhancement Mode Power MOSFET Description The HM100N03KA uses advanced trench technology and design to provide excellent RDS(ON)

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HM100N03GA N-Channel Enhancement Mode Power MOSFET Description The HM100N03GA uses advanced trench technology and design to provide excellent RDS(ON)

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Description The HM100N03D uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide varie

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Transient Voltage Suppressors DO-214AB/SMC Package 1.5SMC Series FEATURE  Peak Power Dissipation: 1500W  Fast response time. IR less than 1μA abov

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MM1001 LDMOS TRANSISTOR 10W, 28V High Power RF LDMOS FETs Description The MM1001 is a 10-watt, highly rugged, unmatched LDMOS FET, designed for wide-b

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NOIH2SM1000A HAS2 Image Sensor INTRODUCTION Scope This datasheet details the ratings, physical, geometrical, electrical and electro-optical character

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Surface Mount Power Inductor FEATURES • SIZES 0806, 1008 & 1210 SIZES • HIGH CURRENT AND LOW DCR CHARACTERISTICS • REFLOW SOLDERABLE • PACKAGE ON TAP

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Temperature and Humidity Module AM1001 / AMT1001 Product Manual 1. Product Overview AM1001 / AMT1001 is humidity resistance type temperature and humi

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Free Datasheet http://www.datasheet4u.com/ Free Datasheet http://www.datasheet4u.com/ Free Datasheet http://www.datasheet4u.com/

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Silicon Miniature Single-Phase Bridge AM100-G/150-G thru AM1010-G/1510-G Voltage: 50 ~ 1000 Volts Current: 1.0 ~ 1.5 Amp Features: Ratings to 1000V PR

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SKM100GB12T4 SEMITRANS® 2 Fast IGBT4 Modules SKM100GB12T4 Features • IGBT4 = 4. generation fast trench IGBT (Infineon) • CAL4 = Soft switching 4. gen

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MITSUBISHI IGBT MODULES CM1000HA-24H HIGH POWER SWITCHING USE INSULATED TYPE A B U - M4 THD (2 TYP.) R K P E M G B S - M8 THD (2 TYP.) A C E

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BSM 100 GB 120 DN2 IGBT Power Module • Half-bridge • Including fast free-wheeling diodes • Package with insulated metal base plate Type BSM 100 GB

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DATA SHEET AM100~AM1010 1.0 AMPERE SILICON MINIATURE SINGLE- PHASE BRIDGES VOLTAGE - 50 to 1000 Volts CURRENT - 1.0 Amperes Recongnized File # E11175

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MITSUBISHI TRANSISTOR MODULES QM1000HA-2HB HIGH POWER SWITCHING USE INSULATED TYPE QM1000HA-2HB • • • • • IC Collector current

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NEW PRODUCT Features • Very Low Forward Voltage Drop • Guard Ring Construction for Transient Protection • High Conductance • Lead, Halogen and Antimo

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SPEC No. LC00307 MODEL No. LM100SS1T522 PAGE 1 Precautions 1) Industrial(Mechanical) design of the product in which this LCD module will be incor

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MITSUMI HBS-Compatible Driver and Receiver MM1007 HBS-Compatible Driver and Receiver Monolithic IC MM1007 Outline This IC conforms to the HBS (Home

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September 2017 MM100F20B 200V 100A FRED RoHS Compliant PRODUCT FEATURES □Ultrafast Recovery Time □Low Recovery Loss □Soft Reverse Recovery Character

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