M100D Datasheet | Specifications & PDF Download

www.DataSheet4U.com MITSUBISHI IGBT MODULES CM100DY-24A HIGH POWER SWITCHING USE CM100DY-24A ¡IC

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MITSUBISHI TRANSISTOR MODULES QM100DY-24BK HIGH POWER SWITCHING USE INSULATED TYPE QM100DY-24BK • • • • • IC Collector current

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MITSUBISHI IGBT MODULES CM100DY-12H HIGH POWER SWITCHING USE INSULATED TYPE A B C F F K E2 G2 Q - DIA. (2 TYP.) D M G1 E1 J C2E1 E2 C1 N (3 TYP

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MITSUBISHI TRANSISTOR MODULES QM100DY-2HBK HIGH POWER SWITCHING USE INSULATED TYPE QM100DY-2HBK • • • • • IC Collector current

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MITSUBISHI TRANSISTOR MODULES QM100DY-2HK HIGH POWER SWITCHING USE INSULATED TYPE QM100DY-2HK • • • • • IC Collector current

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www.DataSheet4U.com APPLICATION NOTE MITSUBISHI TENTATIVE CM100DC-24NFM Pre. S.Kawabata,H.Takemoto,M.Hiyoshi Rev Apr. Y.Nagashima 1-

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MITSUBISHI TRANSISTOR MODULES QM100DY-24K HIGH POWER SWITCHING USE INSULATED TYPE QM100DY-24K • • • • • IC Collector current

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MITSUBISHI IGBT MODULES CM100DY-24NF HIGH POWER SWITCHING USE CM100DY-24NF ¡IC

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MITSUBISHI TRANSISTOR MODULES QM100DY-HK HIGH POWER SWITCHING USE INSULATED TYPE QM100DY-HK • • • • • IC Collector current

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MITSUBISHI IGBT MODULES CM100DY-24H HIGH POWER SWITCHING USE INSULATED TYPE A B H E E H S C2E1 E2 C1 E2 G2 C K G1 E1 G S L R - M5 THD (3 TYP.) P

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MITSUBISHI TRANSISTOR MODULES QM100DY-HBK HIGH POWER SWITCHING USE INSULATED TYPE QM100DY-HBK • • • • • IC Collector current

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www.DataSheet4U.com MITSUBISHI IGBT MODULES CM100DY-34A HIGH POWER SWITCHING USE CM100DY-34A ¡IC

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www.DataSheet4U.com MITSUBISHI IGBT MODULES CM100DU-34KA HIGH POWER SWITCHING USE CM100DU-34KA G IC

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MITSUBISHI DIODE MODULES RM100DZ/CZ-M,-H HIGH POWER GENERAL USE INSULATED TYPE RM100DZ/CZ-M,-H • IF(AV) • VRRM Average forward current

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M100A THRU M100M GENERAL PURPOSE PLASTIC RECTIFIER Reverse Voltage - 50 to 1000 Volts DO-204AL Forward Current - 1.0 Ampere FEATURES 1.0 (25.4) MIN.

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MITSUBISHI IGBT MODULES CM100DU-24NFH HIGH POWER SWITCHING USE CM100DU-24NFH ¡IC

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MITSUBISHI DIODE MODULES RM100DZ/CZ-24,-2H HIGH VOLTAGE MEDIUM POWER GENERAL USE INSULATED TYPE RM100DZ/CZ-24,-2H • IF(AV) • VRRM Average forward

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www.DataSheet.co.kr F ine S P N F ineSiliconP ow erN etw orks Preliminary FGM100D06V1 VCES = 600V Ic = 100A VCE(ON) typ. = 2.2V @ Ic = 100A “HALF-

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APTM100DU18T Dual Common Source MOSFET Power Module D1 Q1 D2 Q2 VDSS = 1000V RDSon = 180mΩ max @ Tj = 25°C ID = 43A @ Tc = 25°C Application • AC Swit

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