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CHM4416JPT - N-Channel Enhancement Mode Field Effect Transistor
CHENMKO ENTERPRISE CO.,LTD CHM4416JPT SURFACE MOUNT N-Channel Enhancement Mode Field Effect Transistor VOLTAGE 30 Volts APPLICATION * Servo motor cont.AM4410N - N-Channel 30-V (D-S) MOSFET
Analog Power N-Channel 30-V (D-S) MOSFET These miniature surface mount MOSFETs utilize a high cell density trench process to provide low rDS(on) and t.DTM4415 - P-Channel 30-V (D-S) MOSFET
P-Channel 30-V (D-S) MOSFET DTM4415 www.din-tek.jp PRODUCT SUMMARY VDS (V) RDS(on) (Ω) - 30 0.0092 at VGS = - 10 V 0.0128 at VGS = - 4.5 V ID (A.APM4412K - N-Channel MOSFET
APM4412K N-Channel Enhancement Mode MOSFET Features • 30V/12A, RDS(ON) = 9mΩ (typ.) @ VGS = 10V RDS(ON) =12mΩ (typ.) @ VGS = 4.5V www.DataSheet4U.com.APM4416 - N-Channel MOSFET
APM4416 N-Channel Enhancement Mode MOSFET Features • • www.DataSheet4U.com Pin Description SO-8 30V/8A , RDS(ON)=15mΩ(typ.) @ VGS=10V RDS(ON)=22mΩ(.M5M44170ATP-10S - Fast Page Mode 4M-Bit DRAM
www.DataSheet4U.com www.DataSheet4U.com www.DataSheet4U.com www.DataSheet4U.com www.DataSheet4U.com www.DataSheet4U.com www.DataSheet4U.com www.Dat.STM4410A - N-Channel Enhancement Mode Field Effect Transistor
S T M4410A S amHop Microelectronics C orp. J an 04 2005 ver1.1 N-C hannel E nhancement Mode Field E ffect Transistor P R ODUC T S UMMAR Y V DS S 30V .HM4410B - N-Channel Enhancement Mode Power MOSFET
HM4410B N-Channel Enhancement Mode Power MOSFET DESCRIPTION The HM4410B uses advanced trench technology and design to provide excellent RDS(ON) with .HM4410 - N-Channel Enhancement Mode Power MOSFET
30V N-Channel Enhancement-Mode MOSFET 30V N MOS HM4410 VDS= 30V RDS(ON), Vgs@10V, Ids@12A = 9.0mΩ RDS(ON), [email protected], Ids@10A = 12mΩ Features Adv.DTM4410 - N-Channel MOSFET
N-Channel 30-V (D-S) MOSFET DTM4410 www.din-tek.jp PRODUCT SUMMARY VDS (V) RDS(on) (Ω) 0.0045 at VGS = 10 V 30 0.0065 at VGS = 4.5 V ID (A)a 18 .APM4410 - N-Channel MOSFET
APM4410 N-Channel Enhancement Mode MOSFET Features Pin Description • 30V/11.5A, RDS(ON) = 9mΩ(typ.) @ VGS = 10V RDS(ON) =14.5mΩ(typ.) @ VGS = 4.5V.STM4417 - P-Channel Enhancement Mode Field Effect Transistor
Green Product Sa mHop Microelectronics C orp. P-Channel Enhancement Mode Field Effect Transistor STM4417 Ver 1.0 PRODUCT SUMMARY VDSS ID RDS(ON) (.APM4416K - N-Channel MOSFET
APM4416K N-Channel Enhancement Mode MOSFET Features • 30V/4A, RDS(ON)=15mΩ(typ.) @ VGS=10V RDS(ON)=22mΩ(typ.) @ VGS=4.5V Super High Dense Cell Design.TSM4414 - 30V N-Channel MOSFET
www.DataSheet4U.com TSM4414 30V N-Channel MOSFET PRODUCT SUMMARY VDS (V) RDS(on)(mΩ) 30 26 @ VGS = 10V 40 @ VGS = 4.5V SOP-8 Pin Definition: 1. So.P2H4M441L - MOSFET
MOSFET 30A 450~500V PD4M441L PD4M440L P2H4M441L P2H4M440L PD4M441L/440L P2H4M441L/440L 108.0 108.0 Approximate Weight :220g Maximum Ratings Ap.PD10M441H - MOSFET
MOSFET 85A 450~500V PD10M441H PD10M440H P2H10M441H P2H10M440H PD10M441H/440H P2H10M441H/440H 108.0 108.0 Approximate Weight :220g Maximum Ratin.PD4M441H - MOSFET 30A 450-500V
MOSFET 30A 450~500V PD4M441H PD4M440H P2H4M441H P2H4M440H PD4M441H/440H P2H4M441H/440H 108.0 108.0 Approximate Weight :220g Maximum Ratings Ap.CEM4416 - N-Channel Enhancement Mode Field Effect Transistor
CEM4416 N-Channel Enhancement Mode Field Effect Transistor FEATURES 30V, 9A, RDS(ON) = 18mΩ @VGS = 10V. RDS(ON) = 28mΩ @VGS = 4.5V. Super high dense .UM4411 - 4 Line ESD/EMI Protection
UM4411 4 Line ESD/EMI Protection for Color LCD Interfaces UM4411 DFN8 1.7×1.3 General Description The UM4411 is a low pass filter array with integra.