CEM4412S1 Features
* 30V , 7A , RDS(ON)=28m Ω @VGS=10V. RDS(ON)=42m Ω @VGS=4.5V. Super high dense cell design for extremely low RDS(ON). High power and current handling capability. Surface mount package. D DDD 8 7 65 SO-8 1 1 234 S SSG ABSOLUTE MAXIMUM RATINGS (TA=25 C unless otherwise noted) Parameter Symbol Dr
CEM4412S1_Chino-ExcelTechnology.pdf
Datasheet Details
CEM4412S1, CEM4412S1_Chino
Chino-Excel Technology
51.78 KB
N-channel enhancement mode field effect transistor.
This datasheet PDF includes multiple part numbers: CEM4412S1, CEM4412S1_Chino.
Please refer to the document for exact specifications by model.
CEM4412S1 Distributor
📁 Related Datasheet
📌 All Tags
