CEM4412S1, CEM4412S1_Chino Datasheet - Chino-Excel Technology

CEM4412S1 N-Channel Enhancement Mode Field Effect Transistor

CEM4412S1 Features

* 30V , 7A , RDS(ON)=28m Ω @VGS=10V. RDS(ON)=42m Ω @VGS=4.5V. Super high dense cell design for extremely low RDS(ON). High power and current handling capability. Surface mount package. D DDD 8 7 65 SO-8 1 1 234 S SSG ABSOLUTE MAXIMUM RATINGS (TA=25 C unless otherwise noted) Parameter Symbol Dr

CEM4412S1_Chino-ExcelTechnology.pdf

CEM4412S1 Datasheet Preview — This datasheet PDF includes multiple part numbers: CEM4412S1, CEM4412S1_Chino. Please refer to the document for exact specifications by model.

Datasheet Details

Part number:

CEM4412S1, CEM4412S1_Chino

Manufacturer:

Chino-Excel Technology

File Size:

51.78 KB

Description:

N-channel enhancement mode field effect transistor.

Note:

This datasheet PDF includes multiple part numbers: CEM4412S1, CEM4412S1_Chino.
Please refer to the document for exact specifications by model.

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TAGS

CEM4412S1 CEM4412S1_Chino N-Channel Enhancement Mode Field Effect Transistor Chino-Excel Technology

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