CEM4487 - P-Channel Enhancement Mode Field Effect Transistor

CET

Datasheet Details

Part number	CEM4487
Manufacturer	CET
File Size	419.12 KB
Description	P-Channel Enhancement Mode Field Effect Transistor
Datasheet	CEM4487_CET.pdf

-40V, -4.2A, RDS(ON) = 66mΩ @VGS = -10V. RDS(ON) = 105mΩ @VGS = -4.5V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead free product is acquired. Surface mount Package. D1 8 CEM4487 D1 7 D2 6 D2 5 SO-8 1 1 S1 2 G1 3 S2 4 G2.

📁 CEM4487 Similar Datasheet

CEM4410 - N-Channel Enhancement Mode Field Effect Transistor (Chino-Excel Technology)
CEM4410A - N-Channel Enhancement Mode Field Effect Transistor (Chino-Excel Technology)
CEM4410B - N-Channel MOSFET (Chino-Excel Technology)
CEM4412-XA - N-Channel Enhancement Mode Field Effect Transistor (Chino-Excel Technology)
CEM4412S1 - N-Channel Enhancement Mode Field Effect Transistor (Chino-Excel Technology)
CEM4416 - N-Channel Enhancement Mode Field Effect Transistor (Chino-Excel Technology)
CEM4426 - N-Channel MOSFET (VBsemi)
CEM4431 - P-Channel Enhancement Mode Field Effect Transistor (Chino-Excel Technology)

Other Datasheets by CET

Published: May 6, 2007 |