CEM4435A Datasheet, Transistor, CET

CEM4435A Features

• Transistor -30V, -8A, RDS(ON) = 20mΩ @VGS = -10V. RDS(ON) = 33mΩ @VGS = -4.5V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead free product

PDF File Details

Part number:

CEM4435A

Manufacturer:

CET

File Size:

109.78kb

Download:

📄 Datasheet

Description:

P-channel enhancement mode field effect transistor.

TAGS

CEM4435A

CET

📁 Related Datasheet

CEM4435 - P-Channel Enhancement Mode Field Effect Transistor (Chino-Excel Technology)
.

CEM4435 - P-Channel MOSFET (VBsemi)
CEM4435 CEM4435 Datasheet .VBsemi. P-Channel 30-V (D-S) MOSFET PRODUCT SUMMARY VDS (V) RDS(on) (Ω) - 30 0.018 at VGS = - 10 V 0.024 at .

CEM4431 - P-Channel Enhancement Mode Field Effect Transistor (Chino-Excel Technology)
CEM4431 P-Channel Enhancement Mode Field Effect Transistor FEATURES -30V, -5.8A, RDS(ON) = 40mΩ @VGS = -10V. RDS(ON) = 70mΩ @VGS = -4.5V. Super high .

CEM4432 - Dual P-Channel MOSFET (Chino-Excel Technology)
CEM4432 Dual P-Channel Enhancement Mode Field Effect Transistor FEATURES -30V, -5.5A, RDS(ON) = 40mΩ @VGS = -10V. RDS(ON) = 70mΩ @VGS = -4.5V. Super h.

CEM4401 - P-Channel MOSFET (CET)
CEM4401 P-Channel Enhancement Mode Field Effect Transistor FEATURES -40V, -5.4A, RDS(ON) = 53mΩ @VGS = -10V. RDS(ON) = 80mΩ @VGS = -4.5V. Super high .

CEM4410 - N-Channel Enhancement Mode Field Effect Transistor (Chino-Excel Technology)
.

CEM4410A - N-Channel Enhancement Mode Field Effect Transistor (Chino-Excel Technology)
CEM4410A N-Channel Enhancement Mode Field Effect Transistor FEATURES 30V, 10A, RDS(ON) = 11mΩ @VGS = 10V. RDS(ON) = 20mΩ @VGS = 4.5V. Super high dens.

CEM4410B - N-Channel MOSFET (Chino-Excel Technology)
CEM4410B Dec. 2002 N-Channel Enhancement Mode Field Effect Transistor 5 FEATURES 30V , 12.5A , RDS(ON)=9.5m Ω @VGS=10V. RDS(ON)=14m Ω @VGS=4.5V. Sup.

CEM4412-XA - N-Channel Enhancement Mode Field Effect Transistor (Chino-Excel Technology)
.

CEM4412S1 - N-Channel Enhancement Mode Field Effect Transistor (Chino-Excel Technology)
CEM4412S1 PRELIMINARY N-Channel Enhancement Mode Field Effect Transistor FEATURES 30V , 7A , RDS(ON)=28m Ω @VGS=10V. RDS(ON)=42m Ω @VGS=4.5V. Super h.