MAPC-A3005-AS (MACOM)
GaN on SiC Transistor
GaN on SiC Transistor, 9 W, 28 V DC – 8 GHz
Features
• Saturated Power: 9 W • Drain Efficiency: 55 % • Small Signal Gain: 14 dB • Lead-Free Air Cavit
(19 views)
GaN on SiC Transistor, 9 W, 28 V DC – 8 GHz Fea.
GaN on SiC Transistor
MAPC-A3005-AS Distributor
