GaN on SiC Transistor, 18 W, 28 V DC - 8 GHz Feat.
MACOM
MAPC-A3006-AB - GaN on SiC Transistor
GaN on SiC Transistor, 18 W, 28 V DC - 8 GHz Features • Saturated Power: 18 W • Drain Efficiency: 70% • Small Signal Gain: 12.5 dB • Lead-Free Air Ca.
