MAPC-A3006-AB (MACOM)
GaN on SiC Transistor
GaN on SiC Transistor, 18 W, 28 V DC - 8 GHz
Features
• Saturated Power: 18 W • Drain Efficiency: 70% • Small Signal Gain: 12.5 dB • Lead-Free Air Ca
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GaN on SiC Transistor, 18 W, 28 V DC - 8 GHz Feat.
GaN on SiC Transistor
MAPC-A3006-AB Distributor
