MAPC-A3006-AB Datasheet - MACOM

MAPC-A3006-AB, GaN on SiC Transistor

GaN on SiC Transistor, 18 W, 28 V DC - 8 GHz

Features

* Saturated Power: 18 W
* Drain Efficiency: 70%
* Small Signal Gain: 12.5 dB
* Lead-Free Air Cavity Ceramic Package
* RoHS

Applications

* Avionics - TACAN, DME, IFF
* Military Radio
* L, S, C-band Radar
* Electronic Warfare
* ISM

Datasheet Details

Part number:

MAPC-A3006-AB

Manufacturer:

MACOM

File Size:

1.35 MB

Description:

Gan on sic transistor.

MAPC-A3006-AB Distributors

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