MAPC-A3006-AB GaN on SiC Transistor

MACOM

Description

GaN on SiC Transistor, 18 W, 28 V DC - 8 GHz .
The MAPC-A3006-AB/AS is a 18 W packaged, unmatched transistor utilizing a high performance, 0.

Datasheet Specifications

Features

* Saturated Power: 18 W
* Drain Efficiency: 70%
* Small Signal Gain: 12.5 dB
* Lead-Free Air Cavity Ceramic Package
* RoHS

Applications

* Avionics - TACAN, DME, IFF
* Military Radio
* L, S, C-band Radar
* Electronic Warfare
* ISM

MAPC-A3006-AB Distributors

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