MAPC-A3006-AB - GaN on SiC Transistor

MACOM

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Datasheet Details

Part number: MAPC-A3006-AB
Manufacturer: MACOM
File Size: 1.35 MB
Datasheet: MAPC-A3006-AB-MACOM.pdf
Description: GaN on SiC Transistor

MAPC-A3006-AB Product details

Description

The MAPC-A3006-AB/AS is a 18 W packaged, unmatched transistor utilizing a high performance, 0.15 µm GaN on SiC production process. Measured at CW = PSAT , defined at IGS = 0.36 mA, VDS = 28

Features

Saturated Power: 18 W.
Drain Efficiency: 70%.
Small Signal Gain: 12.5 dB.
Lead-Free Air Cavity Ceramic Package.
RoHS.
Compliant.

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GaN SiC Transistor MACOM

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