Datasheet4U Logo Datasheet4U.com

MAPC-A3006-AB

GaN on SiC Transistor

MAPC-A3006-AB Features

* Saturated Power: 18 W

* Drain Efficiency: 70%

* Small Signal Gain: 12.5 dB

* Lead-Free Air Cavity Ceramic Package

* RoHS

* Compliant Applications

* Avionics - TACAN, DME, IFF

* Military Radio

* L, S, C-band Radar

* Electron

MAPC-A3006-AB General Description

The MAPC-A3006-AB/AS is a 18 W packaged, unmatched transistor utilizing a high performance, 0.15 µm GaN on SiC production process. This transistor supports both defense and commercial related applications. Offered in a thermally-enhanced flange package, the MAPC-A3006-AB/AS provides superior perform.

MAPC-A3006-AB Datasheet (1.35 MB)

Preview of MAPC-A3006-AB PDF

Datasheet Details

Part number:

MAPC-A3006-AB

Manufacturer:

MACOM

File Size:

1.35 MB

Description:

Gan on sic transistor.

📁 Related Datasheet

MAPC-A3006-AS GaN on SiC Transistor (MACOM)

MAPC-A3005-AD GaN on SiC Transistor (MACOM)

MAPC-A3005-AS GaN on SiC Transistor (MACOM)

MAPC-A3007-AB GaN on SiC Transistor (MACOM)

MAPC-A1103 GaN Amplifier (MACOM)

MAPC-A1524 45V GaN Amplifier (MACOM)

MAPC-A2021 GaN Amplifier (MACOM)

MAPC-104 Non-Isolated DC/DC Converters (Datel)

MAPCGM0001 Phase Shifter (Tyco Electronics)

MAPCGM0001-DIE Phase Shifter (Tyco Electronics)

TAGS

MAPC-A3006-AB GaN SiC Transistor MACOM

Image Gallery

MAPC-A3006-AB Datasheet Preview Page 2 MAPC-A3006-AB Datasheet Preview Page 3

MAPC-A3006-AB Distributor