MAPC-A3006-AS, MAPC-A3006-AB Datasheet - MACOM

MAPC-A3006-AS GaN on SiC Transistor

The MAPC-A3006-AB/AS is a 18 W packaged, unmatched transistor utilizing a high performance, 0.15 µm GaN on SiC production process. This transistor supports both defense and commercial related applications. Offered in a thermally-enhanced flange package, the MAPC-A3006-AB/AS provides superior perform.

MAPC-A3006-AS Features

* Saturated Power: 18 W

* Drain Efficiency: 70%

* Small Signal Gain: 12.5 dB

* Lead-Free Air Cavity Ceramic Package

* RoHS

* Compliant Applications

* Avionics - TACAN, DME, IFF

* Military Radio

* L, S, C-band Radar

* Electron

MAPC-A3006-AB-MACOM.pdf

MAPC-A3006-AS Datasheet Preview — This datasheet PDF includes multiple part numbers: MAPC-A3006-AS, MAPC-A3006-AB. Please refer to the document for exact specifications by model.

Datasheet Details

Part number:

MAPC-A3006-AS, MAPC-A3006-AB

Manufacturer:

MACOM

File Size:

1.35 MB

Description:

Gan on sic transistor.

Note:

This datasheet PDF includes multiple part numbers: MAPC-A3006-AS, MAPC-A3006-AB.
Please refer to the document for exact specifications by model.

MAPC-A3006-AS Distributor

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TAGS

MAPC-A3006-AS MAPC-A3006-AB GaN SiC Transistor MACOM