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MAPC-A3006-AS

GaN on SiC Transistor

MAPC-A3006-AS Features

* Saturated Power: 18 W

* Drain Efficiency: 70%

* Small Signal Gain: 12.5 dB

* Lead-Free Air Cavity Ceramic Package

* RoHS

* Compliant Applications

* Avionics - TACAN, DME, IFF

* Military Radio

* L, S, C-band Radar

* Electron

MAPC-A3006-AS General Description

The MAPC-A3006-AB/AS is a 18 W packaged, unmatched transistor utilizing a high performance, 0.15 µm GaN on SiC production process. This transistor supports both defense and commercial related applications. Offered in a thermally-enhanced flange package, the MAPC-A3006-AB/AS provides superior perform.

MAPC-A3006-AS Datasheet (1.35 MB)

Preview of MAPC-A3006-AS PDF

Datasheet Details

Part number:

MAPC-A3006-AS

Manufacturer:

MACOM

File Size:

1.35 MB

Description:

Gan on sic transistor.

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TAGS

MAPC-A3006-AS GaN SiC Transistor MACOM

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