MAPC-A3006-AS
MACOM
1.35MB
Gan on sic transistor. The MAPC-A3006-AB/AS is a 18 W packaged, unmatched transistor utilizing a high performance, 0.15 µm GaN on SiC production process. Th
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MAPC-A3006-AB - GaN on SiC Transistor
(MACOM)
GaN on SiC Transistor, 18 W, 28 V DC - 8 GHz
Features
• Saturated Power: 18 W • Drain Efficiency: 70% • Small Signal Gain: 12.5 dB • Lead-Free Air Ca.
MAPC-A3005-AD - GaN on SiC Transistor
(MACOM)
GaN on SiC Transistor, 8 W, 28 V DC - 6 GHz
Features
• Saturated Power: 8 W • Drain Efficiency: 69% • Small Signal Gain: 19 dB • DFN 3 x 4, 12 L Plas.
MAPC-A3005-AS - GaN on SiC Transistor
(MACOM)
GaN on SiC Transistor, 9 W, 28 V DC – 8 GHz
Features
• Saturated Power: 9 W • Drain Efficiency: 55 % • Small Signal Gain: 14 dB • Lead-Free Air Cavit.
MAPC-A3007-AB - GaN on SiC Transistor
(MACOM)
GaN on SiC Transistor, 30 W, 28 V DC - 6 GHz
Features
• Saturated Power: 30 W • Drain Efficiency: 67% • Small Signal Gain: 15 dB • Lead-Free Air Cavi.
MAPC-A1103 - GaN Amplifier
(MACOM)
GaN Amplifier 50 V, 270 W DC - 2.7 GHz
MAPC-A1103
Rev. V4
Features
• MACOM PURE CARBIDE™ Amplifier Series • Suitable for Linear & Saturated Applicat.
MAPC-A1524 - 45V GaN Amplifier
(MACOM)
GaN Amplifier 45 V, 400 W 1.7 - 2.2 GHz
Features
• MACOM PURE CARBIDE™ Amplifier Series • Suitable for Linear & Saturated Applications • CW Operation.
MAPC-A2021 - GaN Amplifier
(MACOM)
GaN Amplifier 32 V, 8 W 1.8 - 2.7 GHz
Features
• MACOM PURE CARBIDE™ Amplifier Series • Optimized for 1.8 - 2.7 GHz Applications • High Terminal Impe.
MAPC-104 - Non-Isolated DC/DC Converters
(Datel)
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MAPCGM0001 - Phase Shifter
(Tyco Electronics)
..
1.0-1.9 GHz Phase Shifter
Features
♦ ♦ ♦ ♦ ♦ ♦
RO-P-DS-3069 B Preliminary Information
MAPCGM0001
1.0 to 1.9 GHz Operation 6 Bi.
MAPCGM0001-DIE - Phase Shifter
(Tyco Electronics)
..
Phase Shifter 1.0-1.9 GHz
Features
♦ ♦ ♦ ♦
MAPCGM0001-DIE
903215 — Preliminary Information
6 Bit Phase Shifter 360º Coverage, L.