MAPC-A3007-AB - GaN on SiC Transistor
The MAPC-A3007-AB is a 30 W packaged, unmatched transistor utilizing a high performance, 0.15 µm GaN on SiC production process.
This transistor supports both defense and commercial related applications.
Offered in a thermally-enhanced flange package, the MAPC-A3007-AB provides superior performance u
MAPC-A3007-AB Features
* Saturated Power: 30 W
* Drain Efficiency: 67%
* Small Signal Gain: 15 dB
* Lead-Free Air Cavity Ceramic Package
* RoHS
* Compliant Applications
* Avionics - TACAN, DME, IFF
* Military Radio
* L, S, C-band Radar
* Electronic
