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MAPC-A3007-AB GaN on SiC Transistor

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Description

GaN on SiC Transistor, 30 W, 28 V DC - 6 GHz .
The MAPC-A3007-AB is a 30 W packaged, unmatched transistor utilizing a high performance, 0.

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Datasheet Specifications

Part number
MAPC-A3007-AB
Manufacturer
MACOM
File Size
1.33 MB
Datasheet
MAPC-A3007-AB-MACOM.pdf
Description
GaN on SiC Transistor

Features

* Saturated Power: 30 W
* Drain Efficiency: 67%
* Small Signal Gain: 15 dB
* Lead-Free Air Cavity Ceramic Package
* RoHS

Applications

* Avionics - TACAN, DME, IFF
* Military Radio
* L, S, C-band Radar
* Electronic Warfare
* ISM

MAPC-A3007-AB Distributors

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