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Dual N-Channel 30-V (D-S) MOSFET GENERAL DESCRIPTION The ME4920 is the N-Channel logic enhancement mode power field effect transistors, using high cel

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Matched GaAs SPDT Switch DC - 2 GHz Features q q q SW-331, SW-333 V 2.00 SW-331 (CR-2) Miniature Ceramic Package Fast Switching Speed, 7 ns Typical

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Package information - SOT23-6 Surface mounted, 6 pin package Package outline DIM A A1 A2 b C D E E1 L e e1 L Min. 0.90 0.00 0.90 0.35 0.09 2.70 2.20

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N-Channel 30V(D-S) MOSFET GENERAL DESCRIPTION The ME7362 is the N-Channel logic enhancement mode power field effect transistors are produced using hig

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I (MIP022X) IPD I G( 12 V/3 A : 100 VAC 0.3 W : 100 VAC G IPD (MIP022X) MIP022X G IPD IPD PWM 60 W : 1/20) ; 70 mW, ; 70 , 264 VAC 26

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N-Channel 100-V (D-S) MOSFET GENERAL DESCRIPTION ME15N10/ME15N10-G FEATURES ● RDS(ON)≦100mΩ@VGS=10V ● Super high density cell design for extremely lo

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N-Channel 30-V(D-S) MOSFET GENERAL DESCRIPTION The ME4894 is the N-Channel logic enhancement mode power field effect transistors are produced using hi

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www.DataSheet4U.com LM320081 Passive Matrix LCD Unit DESCRIPTION The SHARP LM320081 Passive Matrix LCD consists of 320 × 240 dots with an FSTN, refle

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P-Channel 30V (D-S) MOSFET GENERAL DESCRIPTION The ME8117 is the P-Channel logic enhancement mode power field effect transistors are produced using hi

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P-Channel 30V (D-S) MOSFET GENERAL DESCRIPTION The ME4411 is the P-Channel logic enhancement mode power field effect transistors are produced using hi

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www.DataSheet4U.com LAMPEX LM16200 [16 x 2, 1/16 MUX] 8.0 1 ALPHANUMERIC DOT MATRIX LCM DIMENSION IN MM 9.5(13.5)* 5.0(9.0)* 80.0±0.5 [3.15±0.020]

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ME08N20/ME08N20-G N- Channel 200V (D-S) MOSFET GENERAL DESCRIPTION The ME08N20 is the N-C hannel lo gic e nhancement mo de p ower field effect transis

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I (MIP022X) IPD I G( 12 V/3 A : 100 VAC 0.3 W : 100 VAC G IPD (MIP022X) MIP022X G IPD IPD PWM 60 W : 1/20) ; 70 mW, ; 70 , 264 VAC 26

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LN2401 PWM/PFM Automatic Controlled DC-DC Converters—Backlight Driver ■ General Description LN2401 series is a group of high efficiency synchronous-

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N-Channel 30-V(D-S) MOSFET GENERAL DESCRIPTION The ME4856 is the N-Channel logic enhancement mode power field effect transistors are produced using hi

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Floppy Disk Controller Devices 1-91 WD279X-02 Floppy Disk Controller Devices 1-92 WD279X-02 Floppy Disk Controller Devices 1-93 WD279X-02 Flo

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www.DataSheet.co.kr PHG600-68-50 Fiber reinforced thermosetting preimpregnated materials for aircraft interior parts. Woven fabric of E-glass filamen

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SOLOMON SYSTECH SEMICONDUCTOR TECHNICAL DATA SSD1315 Advance Information 128 x 64 Dot Matrix OLED/PLED Segment/Common Driver with Controller This do

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