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Matched GaAs SPDT Switch DC - 2 GHz Features q q q SW-331, SW-333 V 2.00 SW-331 (CR-2) Miniature Ceramic Package Fast Switching Speed, 7 ns Typical

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Package information - SOT23-6 Surface mounted, 6 pin package Package outline DIM A A1 A2 b C D E E1 L e e1 L Min. 0.90 0.00 0.90 0.35 0.09 2.70 2.20

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N-Channel 100-V (D-S) MOSFET GENERAL DESCRIPTION ME15N10/ME15N10-G FEATURES ● RDS(ON)≦100mΩ@VGS=10V ● Super high density cell design for extremely lo

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Dual N-Channel 30-V (D-S) MOSFET GENERAL DESCRIPTION The ME4920 is the N-Channel logic enhancement mode power field effect transistors, using high cel

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E2B0034-27-Y2 ¡ Semiconductor MSM6555B-xx ¡ Semiconductor SEGMENT DRIVER This version: Nov. 1997 MSM6555B-xx Previous version: Mar. 1996 DOT MATRIX

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N-Channel 30-V(D-S) MOSFET GENERAL DESCRIPTION The ME4894 is the N-Channel logic enhancement mode power field effect transistors are produced using hi

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SOLOMON SYSTECH SEMICONDUCTOR TECHNICAL DATA SSD1306 Advance Information 128 x 64 Dot Matrix OLED/PLED Segment/Common Driver with Controller This d

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SK52C - SK510C SURFACE MOUNT SCHOTTKY BARRIER DIODES VOLTAGE RANGE: 20 - 100V CURRENT: 5.0 A Features Schottky Barrier Chip Ideally Suited for

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ST75256 4 Level Gray Scale Dot Matrix LCD Controller/Driver Datasheet Sitronix reserves the right to change the contents in this document without prio

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s mu @ MCS@51 8-BIT CONTROL-ORIENTED MICROCONTROLLERS Commercial/Express 8031AH18051AH18051AHP 8032N+18052N-I 8751W8751H-8 8751BW8752BI-I s High Pe

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www.DataSheet.co.kr Quick Reference Guide Sequential Timers ST-10/ST-10M1/ST-6M1/ST-10M2 ELECTRONIC AUTOMATION (P) LTD P. B. # 6414, Yelahanka, Bang

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IPD I IPD (MIP022X) IPD PWM 60 W IPD I G ( 12 V/3 A : 100 VAC : 100 VAC (MIP022X) : 1/20) ; 70 mW, ; 70 , 264 VAC 264 VAC ; 130 mW ; 60 G 0.3 W IPD

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80387DX Math Coprocessor 80387 Memory Logic Diagram FEATURES: • 80-Bit numeric processor • RAD-PAK® radiation hardened against natural space radia

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ME4953/ME4953-G Dual P-Channel 30V (D-S) MOSFET GENERAL DESCRIPTION The ME4953 is the Dual P-Channel logic enhancement mode power field effect transis

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ME08N20/ME08N20-G N- Channel 200V (D-S) MOSFET GENERAL DESCRIPTION The ME08N20 is the N-C hannel lo gic e nhancement mo de p ower field effect transis

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N-Channel MOSFET GENERAL DESCRIPTION The ME2N7002E is the N-Channel enhancement mode field effect transistors are produced using high cell density DMO

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LN2401 PWM/PFM Automatic Controlled DC-DC Converters—Backlight Driver ■ General Description LN2401 series is a group of high efficiency synchronous-

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