.
Fairchild Semiconductor
FDMC6675BZ - N-Channel MOSFET
FDMC6675BZ P-Channel PowerTrench® MOSFET FDMC6675BZ P-Channel Power Trench® MOSFET -30 V, -20 A, 14.4 mΩ Features Max rDS(on) = 14.4 mΩ at VGS = -1.
Analog Devices
HMC667LP2 - GaAs PHEMT MMIC
HMC667LP2 / 667LP2E v02.1110 GaAs PHEMT MMIC LOW NOISE AMPLIFIER, 2.3 - 2.7 GHz 7 Typical Applications Features The HMC667LP2(E) is ideal for: L.
Fairchild Semiconductor
FDMC6679AZ - N-Channel MOSFET
FDMC6679AZ P-Channel PowerTrench® MOSFET July 2009 FDMC6679AZ P-Channel PowerTrench® MOSFET -30 V, -20 A, 10 mΩ Features General Description The FDM.
On Semiconductor
FDMC6679AZ - P-Channel MOSFET
MOSFET – P-Channel, POWERTRENCH) -30 V, -20 A, 10 mW FDMC6679AZ General Description The FDMC6679AZ has been designed to minimize losses in load switch.
Analog Devices
HMC667LP2E - GaAs PHEMT MMIC
HMC667LP2 / 667LP2E v02.1110 GaAs PHEMT MMIC LOW NOISE AMPLIFIER, 2.3 - 2.7 GHz 7 Typical Applications Features The HMC667LP2(E) is ideal for: L.
ON Semiconductor
FDMC6675BZ - P-Channel MOSFET
MOSFET – P-Channel, POWERTRENCH) -30 V, -20 A, 14.4 mW FDMC6675BZ Description The FDMC6675BZ has been designed to minimize losses in load switch appli.
