FDMC6675BZ N-Channel MOSFET

Fairchild Semiconductor

Description

FDMC6675BZ P-Channel PowerTrench® MOSFET FDMC6675BZ P-Channel Power Trench® MOSFET -30 V, -20 A, 14.4 mΩ .
The FDMC6675BZ has been designed to minimize losses in load switch applications.

📥 Download Datasheet

FDMC6675BZ Datasheet Preview — Preview of FDMC6675BZ PDF

Datasheet Specifications

Part number: FDMC6675BZ
Manufacturer: Fairchild Semiconductor
File Size: 321.35 KB
Datasheet: FDMC6675BZ_FairchildSemiconductor.pdf
Description: N-Channel MOSFET

Features

* Max rDS(on) = 14.4 mΩ at VGS = -10 V, ID = -9.5 A
* Max rDS(on) = 27.0 mΩ at VGS = -4.5 V, ID = -6.9 A
* HBM ESD protection level of 8 kV typical(note 3)

Applications

* High performance trench technology for extremely low rDS(on)
* High power and current handling capability

FDMC6675BZ Distributors

📁 Related Datasheet

FDMC6679AZ FDMC6696P FDMC6890NZ FDMC007N08LC FDMC007N30D FDMC008N08C

📌 All Tags

FDMC6675BZ N-Channel MOSFET Fairchild Semiconductor

Fairchild Semiconductor FDMC6675BZ-like datasheet