FDMC6675BZ Datasheet (Fairchild Semiconductor)

FDMC6675BZ, N-Channel MOSFET

The FDMC6675BZ has been designed to minimize losses in load switch applications.

Advancements in both silicon and package technologies have been combined to offer the lowest rDS(on) and ESD protection.

Application * Load Switch in Notebook and Server * Notebook Battery Pack Power Ma

FDMC6675BZ Features

* Max rDS(on) = 14.4 mΩ at VGS = -10 V, ID = -9.5 A

* Max rDS(on) = 27.0 mΩ at VGS = -4.5 V, ID = -6.9 A

* HBM ESD protection level of 8 kV typical(note 3)

* Extended VGSS range (-25 V) for battery applications

* High performance trench technology for extremel