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FDMC610P MOSFET

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Description

FDMC610P P-Channel PowerTrench® MOSFET FDMC610P P-Channel PowerTrench® MOSFET -12 V, -80 A, 3.9 mΩ .
This P-Channel MOSFET has been designed specifically to improve the overall efficiency and to minimize switch node ringing of DC/DC converters using e.

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Features

* Max rDS(on) = 3.9 mΩ at VGS = -4.5 V, ID = -22 A
* Max rDS(on) = 6.4 mΩ at VGS = -2.5 V, ID = -16 A
* State-of-the-art switching performance
* Lower output capacitance, gate resistance, and gate charge boost efficiency
* Shielded gate technology reduces swit

Applications

* High side switching for high end computing
* High power density DC-DC synchronous buck converter Pin 1 D D D D S S D D G S S S Pin 1 S G D D T

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