FDMC6696P P-Channel Power MOSFET

ON Semiconductor

Description

MOSFET * P-Channel, POWERTRENCH) -20 V, -75 A, 4.9 mW FDMC6696P General .
This P. Channel MOSFET is produced using onsemi’s advanced POWERTRENCH process that has been optimized for RDS(on), switching performance and r.

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Datasheet Specifications

Part number: FDMC6696P
Manufacturer: ON Semiconductor ↗
File Size: 390.98 KB
Datasheet: FDMC6696P-ONSemiconductor.pdf
Description: P-Channel Power MOSFET

Features

* Max RDS(on) = 4.9 mW at VGS =
* 4.5 V, ID =
* 18 A
* Max RDS(on) = 16.4 mW at VGS =
* 1.8 V, ID =
* 9 A
* High Performance Trench Technology for Extremely Low RDS(on)
* High Power and Current Handling Capability in a Widely Used Surface M

Applications

* Load Switch
* Battery Management
* Power Management
* Reverse Polarity Protection MAXIMUM RATINGS (TA = 25°C unless otherwise noted) Symbol Parameter Value Unit VDS Drain to Source Voltage
* 20 V VGS Gate to Source Voltage ±12 V ID Drain Curren

FDMC6696P Distributors

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FDMC6696P P-Channel Power MOSFET ON Semiconductor

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