FDMC6696P - P-Channel Power MOSFET

ON Semiconductor

FDMC6696P Datasheet Preview — Preview of FDMC6696P PDF

Datasheet Details

Part number	FDMC6696P
Manufacturer	ON Semiconductor ↗
File Size	390.98 KB
Description	P-Channel Power MOSFET
Datasheet	FDMC6696P-ONSemiconductor.pdf

FDMC6696P Product details

Description

This P Channel MOSFET is produced using onsemi’s advanced POWERTRENCH process that has been optimized for RDS(on), switching performance and ruggedness.

Features

Max RDS(on) = 4.9 mW at VGS =.
4.5 V, ID =.
18 A.
Max RDS(on) = 16.4 mW at VGS =.
1.8 V, ID =.
9 A.
High Performance Trench Technology for Extremely Low RDS(on).
High Power and Current Handling Capability in a Widely Used Surface Mount Package.
These Devices are Pb.
Free, Halogen Free/BFR Free and are RoHS Compliant.

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Published: Jan 23, 2023 |