Datasheet Details
- Part number
- FDMC008N08C
- Manufacturer
- ON Semiconductor ↗
- File Size
- 553.68 KB
- Datasheet
- FDMC008N08C-ONSemiconductor.pdf
- Description
- N-Channel MOSFET
FDMC008N08C Description
MOSFET * N-Channel, Shielded Gate, POWERTRENCH) 80 V, 60 A, 7.8 mW FDMC008N08C General .
This N.
Channel MV MOSFET is produced using onsemi’s
advanced POWERTRENCH process that incorporates Shielded Gate technology.
FDMC008N08C Features
* Shielded Gate MOSFET Technology
* Max RDS(on) = 7.8 mW at VGS = 10 V, ID = 21 A
* Max RDS(on) = 19.3 mW at VGS = 6 V, ID = 10 A
* 50% Lower Qrr Than Other MOSFET Suppliers
* Lowers Switching Noise/EMI
* MSL1 Robust Package Design
* 100% UIL t
FDMC008N08C Applications
* Primary DC
* DC MOSFET
* Synchronous Rectifier in DC
* DC and AC
* DC
* Motor Drive
* Solar
MOSFET MAXIMUM RATINGS (TA = 25°C unless otherwise noted)
Symbol
Parameter
Value
Unit
VDS
Drain to Source Voltage
80
V
VGS
Gate to Source Voltage
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