FDMC008N08C - N-Channel MOSFET
FDMC008N08C Features
* Shielded Gate MOSFET Technology
* Max RDS(on) = 7.8 mW at VGS = 10 V, ID = 21 A
* Max RDS(on) = 19.3 mW at VGS = 6 V, ID = 10 A
* 50% Lower Qrr Than Other MOSFET Suppliers
* Lowers Switching Noise/EMI
* MSL1 Robust Package Design
* 100% UIL t
