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FDMC008N08C - N-Channel MOSFET

FDMC008N08C Description

MOSFET * N-Channel, Shielded Gate, POWERTRENCH) 80 V, 60 A, 7.8 mW FDMC008N08C General .
This N. Channel MV MOSFET is produced using onsemi’s advanced POWERTRENCH process that incorporates Shielded Gate technology.

FDMC008N08C Features

* Shielded Gate MOSFET Technology
* Max RDS(on) = 7.8 mW at VGS = 10 V, ID = 21 A
* Max RDS(on) = 19.3 mW at VGS = 6 V, ID = 10 A
* 50% Lower Qrr Than Other MOSFET Suppliers
* Lowers Switching Noise/EMI
* MSL1 Robust Package Design
* 100% UIL t

FDMC008N08C Applications

* Primary DC
* DC MOSFET
* Synchronous Rectifier in DC
* DC and AC
* DC
* Motor Drive
* Solar MOSFET MAXIMUM RATINGS (TA = 25°C unless otherwise noted) Symbol Parameter Value Unit VDS Drain to Source Voltage 80 V VGS Gate to Source Voltage

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N-Channel MOSFET ON Semiconductor
ON Semiconductor FDMC008N08C-like datasheet