Datasheet Details
- Part number
- FDMC012N03
- Manufacturer
- ON Semiconductor ↗
- File Size
- 401.99 KB
- Datasheet
- FDMC012N03-ONSemiconductor.pdf
- Description
- 30V N-Channel MOSFET
FDMC012N03 Description
MOSFET * N-Channel, POWERTRENCH) 30 V, 1.23 mW FDMC012N03 General .
This N.
Channel MOSFET is produced using onsemi’s advanced
POWERTRENCH process that has been especially tailored to minimize the on.
sta.
FDMC012N03 Features
* Max RDS(on) = 1.23 mW at VGS = 10 V, ID = 35 A
* Max RDS(on) = 1.46 mW at VGS = 4.5 V, ID = 32 A
* High Performance Technology for Extremely Low RDS(on)
* Termination is Lead
* Free
* This Device is Pb
* Free, Halide Free and RoHS Compliant
Appli
FDMC012N03 Applications
* DC
* DC Conversion
ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise noted)
Symbol
Parameter
Value Unit
VDS Drain to Source Voltage
VGS Gate to Source Voltage
ID
Drain Current
* Continuous (Note 5)
* Continuous (Note 5)
* Continuous (Note 1a)
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