FDMC012N03 30V N-Channel MOSFET

ON Semiconductor

Description

MOSFET * N-Channel, POWERTRENCH) 30 V, 1.23 mW FDMC012N03 General .
This N. Channel MOSFET is produced using onsemi’s advanced POWERTRENCH process that has been especially tailored to minimize the on. sta.

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Datasheet Specifications

Part number: FDMC012N03
Manufacturer: ON Semiconductor ↗
File Size: 401.99 KB
Datasheet: FDMC012N03-ONSemiconductor.pdf
Description: 30V N-Channel MOSFET

Features

* Max RDS(on) = 1.23 mW at VGS = 10 V, ID = 35 A
* Max RDS(on) = 1.46 mW at VGS = 4.5 V, ID = 32 A
* High Performance Technology for Extremely Low RDS(on)
* Termination is Lead
* Free
* This Device is Pb
* Free, Halide Free and RoHS Compliant Appli

Applications

* DC
* DC Conversion ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise noted) Symbol Parameter Value Unit VDS Drain to Source Voltage VGS Gate to Source Voltage ID Drain Current
* Continuous (Note 5)
* Continuous (Note 5)
* Continuous (Note 1a)

FDMC012N03 Distributors

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FDMC012N03 30V N-Channel MOSFET ON Semiconductor

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