Datasheet Details
- Part number
- FDMC007N30D
- Manufacturer
- ON Semiconductor ↗
- File Size
- 406.86 KB
- Datasheet
- FDMC007N30D-ONSemiconductor.pdf
- Description
- Dual N-Channel MOSFET
FDMC007N30D Description
MOSFET * Dual, N-Channel, POWERTRENCH) Q1: 30 V, 11.6 mW; Q2: 30 V, 6.4 mW FDMC007N30D General .
This device includes two specialized N.
Channel MOSFETs in
a dual Power33 (3mm × 3mm MLP) package.
FDMC007N30D Features
* Q1: N
* Channel
* Max RDS(on) = 11.6 mW at VGS = 10 V, ID = 10 A
* Max RDS(on) = 13.3 mW at VGS = 4.5 V, ID = 9 A
Q1: N
* Channel
* Max RDS(on) = 6.4 mW at VGS = 10 V, ID = 16 A
* Max RDS(on) = 7.0 mW at VGS = 4.5 V, ID = 15 A
* RoHS Compliant
Appl
FDMC007N30D Applications
* Mobile Computing
* Mobile Internet Devices
* General Purpose Point of Load
MOSFET MAXIMUM RATINGS (TC = 25°C unless otherwise noted)
Symbol
Parameter
Q1
Q2
Unit
VDS Drain to Source Voltage
30
30
V
VGS Gate to Source Voltage (Note 4) ±12
±12
V
ID
Drain Current
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