FDMC007N30D Dual N-Channel MOSFET

ON Semiconductor

Description

MOSFET * Dual, N-Channel, POWERTRENCH) Q1: 30 V, 11.6 mW; Q2: 30 V, 6.4 mW FDMC007N30D General .
This device includes two specialized N. Channel MOSFETs in a dual Power33 (3mm × 3mm MLP) package.

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Datasheet Specifications

Part number: FDMC007N30D
Manufacturer: ON Semiconductor ↗
File Size: 406.86 KB
Datasheet: FDMC007N30D-ONSemiconductor.pdf
Description: Dual N-Channel MOSFET

Features

* Q1: N
* Channel
* Max RDS(on) = 11.6 mW at VGS = 10 V, ID = 10 A
* Max RDS(on) = 13.3 mW at VGS = 4.5 V, ID = 9 A Q1: N
* Channel
* Max RDS(on) = 6.4 mW at VGS = 10 V, ID = 16 A
* Max RDS(on) = 7.0 mW at VGS = 4.5 V, ID = 15 A
* RoHS Compliant Appl

Applications

* Mobile Computing
* Mobile Internet Devices
* General Purpose Point of Load MOSFET MAXIMUM RATINGS (TC = 25°C unless otherwise noted) Symbol Parameter Q1 Q2 Unit VDS Drain to Source Voltage 30 30 V VGS Gate to Source Voltage (Note 4) ±12 ±12 V ID Drain Current

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Dual N-Channel MOSFET ON Semiconductor

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