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MC836 Datasheet, Features, Application

MC836 INTEGRATED CIRCUITS

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Motorola

MC836 - INTEGRATED CIRCUITS

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Fairchild Semiconductor

FDMC8360L - N-Channel Shielded Gate Power Trench MOSFET

FDMC8360L N-Channel Shielded Gate Power Trench® MOSFET June 2013 FDMC8360L N-Channel Shielded Gate Power Trench® MOSFET 40 V, 80 A, 2.1 mΩ Features .
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Analog Devices

HMC836LP6CE - FRACTIONAL-N PLL

HMC836LP6CE v07.1211 FRACTIONAL-N PLL WITH INTEGRATED VCO, 3365 - 3705 MHz Features • RF Bandwidth: 3365 to 3705 MHz • Ultra Low Phase Noise -98 dB.
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Hittite Microwave Corporation

HMC836LP6CE - Fractional-N Synthesizer

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Analog Devices

HMC8364 - 18.10GHz to 26.60GHz Quadband VCO

Data Sheet 18.10 GHz to 26.60 GHz Quadband VCO HMC8364 FEATURES Set of 4 narrow-band VCOs with consistent sensitivity vs. frequency RF and tuning po.
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Analog Devices

HMC8362 - 11.90 GHz to 18.30 GHz Quadband VCO

Data Sheet 11.90 GHz to 18.30 GHz Quadband VCO HMC8362 FEATURES Set of 4 narrow-band VCOs with consistent sensitivity vs. frequency RF and tuning po.
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ON Semiconductor

FDMC8360L - N-Channel MOSFET

MOSFET – N-Channel, Shielded Gate POWERTRENCH) 40 V, 80 A, 2.1 mW FDMC8360L General Description This N−Channel MOSFET is produced using onsemi’s adva.
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