FDMC8360L N-Channel Shielded Gate Power Trench MOSFET

Fairchild Semiconductor

Description

FDMC8360L N-Channel Shielded Gate Power Trench® MOSFET June 2013 FDMC8360L N-Channel Shielded Gate Power Trench® MOSFET 40 V, 80 A, 2.1 mΩ .
This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench® process that incorporates Shielded Gate technology.

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Datasheet Specifications

Part number: FDMC8360L
Manufacturer: Fairchild Semiconductor
File Size: 377.00 KB
Datasheet: FDMC8360L_FairchildSemiconductor.pdf
Description: N-Channel Shielded Gate Power Trench MOSFET

Features

* Shielded Gate MOSFET Technology
* Max rDS(on) = 2.1 mΩ at VGS = 10 V, ID = 27 A
* Max rDS(on) = 3.1 mΩ at VGS = 4.5 V, ID = 22 A
* High performance technology for extremely low rDS(on)
* Termination is Lead-free
* 100% UIL Tested
* RoHS Compl

FDMC8360L Distributors

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FDMC8360L N-Channel Shielded Gate Power Trench MOSFET Fairchild Semiconductor

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