FDMC8360L Datasheet - Fairchild Semiconductor

N-Channel Shielded Gate Power Trench MOSFET

FDMC8360L Features

* Shielded Gate MOSFET Technology

* Max rDS(on) = 2.1 mΩ at VGS = 10 V, ID = 27 A

* Max rDS(on) = 3.1 mΩ at VGS = 4.5 V, ID = 22 A

* High performance technology for extremely low rDS(on)

* Termination is Lead-free

* 100% UIL Tested

* RoHS Compl

FDMC8360L General Description

This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench® process that incorporates Shielded Gate technology. This process has been optimized for the on-state resistance and yet maintain superior switching performance. Application * DC-DC Conversion Pin 1 Pin .

FDMC8360L Datasheet (377.00 KB)

FDMC8360L Datasheet Preview — Preview of FDMC8360L PDF

Datasheet Details

Part number:

FDMC8360L

Manufacturer:

Fairchild Semiconductor

File Size:

377.00 KB

Description:

N-channel shielded gate power trench mosfet.

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FDMC8360L N-Channel Shielded Gate Power Trench MOSFET Fairchild Semiconductor

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FDMC8360L Features

FDMC8360L General Description

Datasheet Details

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