FDMC8360L - N-Channel Shielded Gate Power Trench MOSFET
This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench® process that incorporates Shielded Gate technology.
This process has been optimized for the on-state resistance and yet maintain superior switching performance.
Application * DC-DC Conversion Pin 1 Pin
FDMC8360L Features
* Shielded Gate MOSFET Technology
* Max rDS(on) = 2.1 mΩ at VGS = 10 V, ID = 27 A
* Max rDS(on) = 3.1 mΩ at VGS = 4.5 V, ID = 22 A
* High performance technology for extremely low rDS(on)
* Termination is Lead-free
* 100% UIL Tested
* RoHS Compl
