FDMC8010 - N-Channel PowerTrench MOSFET
April 2014 * Max rDS(on) = 1.3 mΩ at VGS = 10 V, ID = 30 A * Max rDS(on) = 1.8 mΩ at VGS = 4.5 V, ID = 25 A * High performance technology for extremely low rDS(on) * Termination is Lead-free and RoHS Compliant This N-Channel MOSFET is produced using Fairchild Semic
