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FDMC8030 Dual N-Channel Power MOSFET

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Description

FDMC8030 Dual N-Channel Power Trench® MOSFET August 2011 FDMC8030 Dual N-Channel Power Trench® MOSFET 40 V, 12 A, 10 mΩ .
This device includes two 40V N-Channel MOSFETs in a dual Power 33 (3 mm X 3 mm MLP) package.

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Datasheet Specifications

Part number
FDMC8030
Manufacturer
Fairchild Semiconductor
File Size
370.88 KB
Datasheet
FDMC8030_FairchildSemiconductor.pdf
Description
Dual N-Channel Power MOSFET

Features

* Max rDS(on) = 10 mΩ at VGS = 10 V, ID = 12 A
* Max rDS(on) = 14 mΩ at VGS = 4.5 V, ID = 10 A
* Max rDS(on) = 28 mΩ at VGS = 3.2 V, ID = 4 A

Applications

* Battery Protection
* Load Switching
* Point of Load Pin 1 G1 S1 S1 S1 G2 D1 D2 S2 S2 Bottom Drain2 Contact 8 7 6 5 Q2 1 G1 2 S1 3 S1 4 S1 Q1 G2 S2 S2 S2 Power 33 S2 Bottom Drain1 Contact MOSFET Maximum Ratings TA = 25 °C unless otherwise noted Symbol VDS VGS ID EA

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