FDMC8010ET30 - MOSFET
This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench® process that has been especially tailored to minimize the on-state resistance.
This device is well suited for applications where ultra low rDS(on) is required in small spaces such as High performance VRM, POL and
FDMC8010ET30 Features
* Extended TJ rating to 175°C
* Max rDS(on) = 1.3 mΩ at VGS = 10 V, ID = 30 A
* Max rDS(on) = 1.8 mΩ at VGS = 4.5 V, ID = 25 A
* High performance technology for extremely low rDS(on)
* Termination is Lead-free and RoHS Compliant January 2015 General Descripti
