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FDMC8010ET30

MOSFET

FDMC8010ET30 Features

* Extended TJ rating to 175°C

* Max rDS(on) = 1.3 mΩ at VGS = 10 V, ID = 30 A

* Max rDS(on) = 1.8 mΩ at VGS = 4.5 V, ID = 25 A

* High performance technology for extremely low rDS(on)

* Termination is Lead-free and RoHS Compliant January 2015 General Descripti

FDMC8010ET30 General Description

This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench® process that has been especially tailored to minimize the on-state resistance. This device is well suited for applications where ultra low rDS(on) is required in small spaces such as High performance VRM, POL and.

FDMC8010ET30 Datasheet (330.99 KB)

Preview of FDMC8010ET30 PDF

Datasheet Details

Part number:

FDMC8010ET30

Manufacturer:

Fairchild Semiconductor

File Size:

330.99 KB

Description:

Mosfet.

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FDMC8010ET30 MOSFET Fairchild Semiconductor

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