FDMC8026S - N-Channel MOSFET
* Max rDS(on) = 4.4 mΩ at VGS = 10 V, ID = 19 A * Max rDS(on) = 5.2 mΩ at VGS = 4.5 V, ID = 17.5 A * Advanced package and silicon combination for low rDS(on) and high efficiency * SyncFET Schottky Body Diode * MSL1 robust package design * 100% UIL tes
