FDMC8321L
Description
This N-Channel MOSFET has been designed specifically to improve the overall efficiency and to minimize switch mode ringing of DC/DC converters using either synchronous or conventional switching PWM contollers. It has been optimized for low gate charge, low RDS(on), fast switching speed body diode reverse recovery performance.
Key Features
- Max RDS(on) = 2.5 mW at VGS = 10 V, ID = 22 A Max RDS(on) = 4.1 mW at VGS = 4.5 V, ID = 18 A
- Advanced Package and Silicon Combination for Low RDS(on) and High Efficiency
- Next Generation Enhanced Body Diode Technology, Engineered for Soft Recovery
- 100% UIL Tested
- Pb-Free, Halide Free and RoHS Compliant
