FDMC8321L
Description
This N-Channel MOSFET has been designed specifically to improve the overall efficiency and to minimize switch node ringing of DC/DC converters using either synchronous or convertional switching PWM contollers. It has been optimized for low gate charge, low rDS(on), fast switching speed body diode reverse recovery performance.
Key Features
- Max rDS(on) = 2.5 mΩ at VGS = 10 V, ID = 22 A
- Max rDS(on) = 4.1 mΩ at VGS = 4.5 V, ID = 18 A
- Advanced Package and Silicon combination for low rDS(on) and hign efficiency
- Next Generation enhanced body diode technology, engineered for soft recovery
- 100% UIL tested
- RoHS Compliant
