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FDMC8321L N-Channel PowerTrench® MOSFET
February 2013
FDMC8321L
N-Channel Power Trench® MOSFET
40 V, 49 A, 2.5 mΩ
Features
Max rDS(on) = 2.5 mΩ at VGS = 10 V, ID = 22 A Max rDS(on) = 4.1 mΩ at VGS = 4.5 V, ID = 18 A Advanced Package and Silicon combination for low rDS(on)
and hign efficiency
Next Generation enhanced body diode technology, engineered for soft recovery
100% UIL tested
RoHS Compliant
General Description
This N-Channel MOSFET has been designed specifically to improve the overall efficiency and to minimize switch node ringing of DC/DC converters using either synchronous or convertional switching PWM contollers. It has been optimized for low gate charge, low rDS(on), fast switching speed body diode reverse recovery performance.
FDMC8321L Datasheet
