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FDMC8327L N-Channel PowerTrench® MOSFET
October 2013
FDMC8327L
N-Channel PowerTrench® MOSFET
40 V, 14 A, 9.7 mΩ
Features
Max rDS(on) = 9.7 mΩ at VGS = 10 V, ID = 12 A Max rDS(on) = 12.5 mΩ at VGS = 4.5 V, ID = 10 A Low Profile - 0.8mm max in Power 33 100% UIL test RoHS Compliant
General Description
This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced Power Trench® process that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance.
Application
DC-DC Conversion
Top
Bottom
8765
DD D D
S
D
S
D
S
D
G
D
1 234
GS S S
MLP 3.3x3.
FDMC8327L Datasheet
