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FDMC8327L Datasheet MOSFET

Manufacturer: Fairchild (now onsemi)

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General Description

This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced Power Trench® process that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance.

Application „ DC-DC Conversion Top Bottom 8765 DD D D S D S D S D G D 1 234 GS S S MLP 3.3x3.3 MOSFET Maximum Ratings TA = 25 °C unless otherwise noted Symbol VDS VGS ID EAS PD TJ, TSTG Parameter Drain to Source Voltage Gate to Source Voltage Drain Current - Continuous (Package limited) - Continuous (Silicon limited) - Continuous - Pulsed TC = 25 °C TC = 25 °C TA = 25 °C Single Pulse Avalanche Energy Power Dissipation TC = 25 °C Power Dissipation TA = 25 °C Operating and Storage Junction Temperature Range Thermal Characteristics (Note 1a) (Note 3) (Note 1a) Ratings 40 ±20 14 43 12 60 25 30 2.3 -55 to +150 Units V V A mJ W °C RθJC RθJA Thermal Resistance, Junction to Case Thermal Resistance, Junction to Ambient Package Marking and Ordering Information (Note 1) 4.2 (Note 1a) 53 °C/W Device Marking FDMC8327L Device FDMC8327L Package Power 33 Reel Size 13 ” Tape Width 12 mm Quantity 3000 units ©2012 Fairchild Semiconductor Corporation 1 FDMC8327L Rev.C2 www.fairchildsemi.com FDMC8327L N-Channel PowerTrench® MOSFET Electrical Characteristics TJ = 25 °C unless otherwise noted Symbol Parameter Test Conditions Min Typ Max Units Off Characteristics BVDSS ΔBVDSS ΔTJ IDSS IGSS Drain to Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current Gate to Source Leakage Current ID = 250 μA, VGS = 0 V ID = 250 μA, referenced to 25 °C VDS = 32 V, VGS = 0 V VGS = ±

Overview

FDMC8327L N-Channel PowerTrench® MOSFET October 2013 FDMC8327L N-Channel PowerTrench® MOSFET 40 V, 14 A, 9.

Key Features

  • Max rDS(on) = 9.7 mΩ at VGS = 10 V, ID = 12 A.
  • Max rDS(on) = 12.5 mΩ at VGS = 4.5 V, ID = 10 A.
  • Low Profile - 0.8mm max in Power 33.
  • 100% UIL test.
  • RoHS Compliant General.

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