Datasheet Summary
FDMC8327L N-Channel PowerTrench® MOSFET
October 2013
N-Channel PowerTrench® MOSFET
40 V, 14 A, 9.7 mΩ
Features
- Max rDS(on) = 9.7 mΩ at VGS = 10 V, ID = 12 A
- Max rDS(on) = 12.5 mΩ at VGS = 4.5 V, ID = 10 A
- Low Profile
- 0.8mm max in Power 33
- 100% UIL test
- RoHS pliant
General Description
This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced Power Trench® process that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance.
Application
- DC-DC Conversion
Top
Bottom
DD D D
1 234
GS S S
MLP 3.3x3.3
MOSFET Maximum Ratings TA = 25 °C unless otherwise...
