FDMC8327L
Overview
This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced Power Trench® process that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance.
- Max rDS(on) = 9.7 mΩ at VGS = 10 V, ID = 12 A
- Max rDS(on) = 12.5 mΩ at VGS = 4.5 V, ID = 10 A
- Low Profile - 0.8mm max in Power 33
- 100% UIL test
- RoHS Compliant
