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FDMC8321LDC N-Channel PowerTrench® MOSFET
December 2014
FDMC8321LDC
N-Channel Power Trench® MOSFET
40 V, 108 A, 2.5 mΩ
Features
Dual CoolTM Top Side Cooling PQFN package
Max rDS(on) = 2.5 mΩ at VGS = 10 V, ID = 27 A Max rDS(on) = 4.1 mΩ at VGS = 4.5 V, ID = 21 A High performance technology for extremely low rDS(on) RoHS Compliant
General Description
This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench® process. Advancements in both silicon and Dual CoolTM package technologies have been combined to offer the lowest rDS(on) while maintaining excellent switching performance by extremely low Junction-to-Ambient thermal resistance.
FDMC8321LDC Datasheet
