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FDMC8321LDC Datasheet MOSFET

Manufacturer: Fairchild (now onsemi)

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General Description

This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench® process.

Advancements in both silicon and Dual CoolTM package technologies have been combined to offer the lowest rDS(on) while maintaining excellent switching performance by extremely low Junction-to-Ambient thermal resistance.

Applications „ Primary DC-DC Switch „ Motor Bridge Switch „ Synchronous Rectifier Pin 1 G S S S Top Power 33 D DDD Bottom S S S G D D D D MOSFET Maximum Ratings TA = 25 °C unless otherwise noted Symbol VDS VGS ID Parameter Drain to Source Voltage Gate to Source Voltage Drain Current

Overview

FDMC8321LDC N-Channel PowerTrench® MOSFET December 2014 FDMC8321LDC N-Channel Power Trench® MOSFET 40 V, 108 A, 2.

Key Features

  • Dual CoolTM Top Side Cooling PQFN package.
  • Max rDS(on) = 2.5 mΩ at VGS = 10 V, ID = 27 A.
  • Max rDS(on) = 4.1 mΩ at VGS = 4.5 V, ID = 21 A.
  • High performance technology for extremely low rDS(on).
  • RoHS Compliant General.

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