FDMC8097AC Description
These dual N and P−Channel enhancement mode Power MOSFETs are produced using onsemi’s advanced POWERTRENCH process that has been especially tailored to minimize on−state resistance and yet maintain superior switching performance. Shrinking the area needed for implementation of active clamp topology; enabling best in class power density.
FDMC8097AC Key Features
- Max RDS(on) = 155 mW at VGS = 10 V, ID = 2.4 A
- Max RDS(on) = 212 mW at VGS = 6 V, ID = 2 A
- Max RDS(on) = 1200 mW at VGS = -10 V, ID = -0.9 A
- Max RDS(on) = 1400 mW at VGS = -6 V, ID = -0.8 A
- Optimised for Active Clamp Forward Converters
- Pb-Free, Halide Free and RoHS pliant