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FDMC8462 N-Channel MOSFET

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Description

MOSFET * N-Channel, POWERTRENCH) 40 V, 20 A, 5.8 mW FDMC8462 General .
This N. Channel MOSFET is produced using onsemi’s advanced POWERTRENCH process that has been especially tailored to minimize the on. sta.

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Features

* Max rDS(on) = 5.8 mW at VGS = 10 V, ID = 13.5 A Max rDS(on) = 8.0 mW at VGS = 4.5 V, ID = 11.8 A
* Low Profile
* 1 mm Max in Power 33
* 100% UIL Tested
* Pb

Applications

* DC
* DC Conversion ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise noted) Symbol Parameter Value Unit VDS Drain to Source Voltage 40 V VGS Gate to Source Voltage ±20 V ID Drain Current A
* Continuous (Package Limited) TC = 25°C 20
* Continuous (S

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