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FDMC8200 N-Channel MOSFET

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Description

FDMC8200 Dual N-Channel PowerTrench® MOSFET June 2009 FDMC8200 Dual N-Channel PowerTrench® MOSFET 30 V, 9.5 mΩ and 20 mΩ .
This device includes two specialized N-Channel MOSFETs in a dual Power33 (3mm x 3mm MLP) package.

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Features

* Q1: N-Channel
* Max rDS(on) = 20 mΩ at VGS = 10 V, ID = 6 A
* Max rDS(on) = 32 mΩ at VGS = 4.5 V, ID = 5 A Q2: N-Channel
* Max rDS(on) = 9.5 mΩ at VGS = 10 V, ID = 9 A
* Max rDS(on) = 13.5 mΩ at VGS = 4.5 V, ID = 7 A

Applications

* Mobile Computing
* Mobile Internet Devices
* General Purpose Point of Load Pin 1 G1 D1 D1 D1 G HS V IN V IN V IN S2 DE NO 5 6 7 8 Q2 4 D1 3 D1 2 D1 Q1 D1 D2/S1 S2 V IN H ITC SW S2 ND DG GN S2 G2 G2 BOTTOM S2 S2 G LS D GN 1 G1 BOTTOM Power 33 www. DataSh

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