FDMC8032L - Dual N-Channel MOSFET
FDMC8032L Features
* Max rDS(on) = 20 mW at VGS = 10 V, ID = 7 A
* Max rDS(on) = 27 mW at VGS = 4.5 V, ID = 6 A
* Low Inductance Packaging Shortens Rise/Fall Times
* Lower Switching Losses
* 100% Rg Tested
* This Device is Pb
* Free and is RoHS Compliant Applicatio
