FDMC8032L Datasheet - On Semiconductor

Dual N-Channel MOSFET

* Max rDS(on) = 20 mW at VGS = 10 V, ID = 7 A

* Max rDS(on) = 27 mW at VGS = 4.5 V, ID = 6 A

* Low Inductance Packaging Shortens Rise/Fall Times

* Lower Switching Losses

* 100% Rg Tested

* This Device is Pb

* Free and is RoHS Compliant Applicatio

FDMC8032L

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Dual n-channel mosfet.

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FDMC8032L Dual N-Channel MOSFET On Semiconductor

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