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FDMC8032L Dual N-Channel MOSFET

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Description

MOSFET * Dual N-Channel, POWERTRENCH) 40 V, 7 A, 20 mW FDMC8032L General .
This device includes two 40 V N. Channel MOSFETs in a dual Power 33 (3 mm x 3 mm MLP) package.

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Features

* Max rDS(on) = 20 mW at VGS = 10 V, ID = 7 A
* Max rDS(on) = 27 mW at VGS = 4.5 V, ID = 6 A
* Low Inductance Packaging Shortens Rise/Fall Times
* Lower Switching Losses
* 100% Rg Tested
* This Device is Pb
* Free and is RoHS Compliant Applicatio

Applications

* Battery Protection
* Load Switching
* Point of Load MOSFET MAXIMUM RATINGS (TA = 25°C unless otherwise noted) Symbol Parameter Ratings Units VDS Drain to Source Voltage 40 V VGS Gate to Source Voltage ±20 V ID Drain Current 20 A
* Continuous

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