FDMC8015L - MOSFET
* Max rDS(on) = 26 mΩ at VGS = 10 V, ID = 7 A * Max rDS(on) = 36 mΩ at VGS = 4.5 V, ID = 6 A * Low Profile - 1 mm max in Power 33 * 100% UIL Tested * RoHS Compliant This N-Channel MOSFET is produced using Fairchild Semiconductor‘s advanced Power Trench® proc
