FDMC8030 Dual N-Channel MOSFET

ON Semiconductor

Description

MOSFET * Dual N-Channel, POWERTRENCH) 40 V, 12 A, 10 mW FDMC8030 General .
This device includes two 40 V N. Channel MOSFETs in a dual Power 33 (3 mm x 3 mm MLP) package.

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Datasheet Specifications

Part number: FDMC8030
Manufacturer: ON Semiconductor ↗
File Size: 265.88 KB
Datasheet: FDMC8030-ONSemiconductor.pdf
Description: Dual N-Channel MOSFET

Features

* Max rDS(on) = 10 mW at VGS = 10 V, ID = 12 A
* Max rDS(on) = 14 mW at VGS = 4.5 V, ID = 10 A
* Max rDS(on) = 28 mW at VGS = 3.2 V, ID = 4 A
* This Device is Pb

Applications

* Battery Protection
* Load Switching
* Point of Load MOSFET MAXIMUM RATINGS (TA = 25°C unless otherwise noted) Symbol Parameter Ratings Units VDS Drain to Source Voltage 40 V VGS Gate to Source Voltage (Note 4) ±12 V ID Drain Current A
* Continuous TA =

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FDMC8030 Dual N-Channel MOSFET ON Semiconductor

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