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FDMC8200S MOSFET

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Description

FDMC8200S Dual N-Channel PowerTrench® MOSFET March 2011 FDMC8200S Dual N-Channel PowerTrench® MOSFET 30 V, 10 mΩ, 20 mΩ .
This device includes two specialized N-Channel MOSFETs in a due power33(3mm X 3mm MLP) package.

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Features

* Q1: N-Channel
* Max rDS(on) = 20 mΩ at VGS = 10 V, ID = 6 A
* Max rDS(on) = 32 mΩ at VGS = 4.5 V, ID = 5 A Q2: N-Channel
* Max rDS(on) = 10 mΩ at VGS = 10 V, ID = 8.5 A
* Max rDS(on) = 13.5 mΩ at VGS = 4.5 V, ID = 7.2 A

Applications

* Mobile Computing
* Mobile Internet Devices
* General Purpose Point of Load Pin 1 Bottom D1 D1 D1 G1 D1 D2/S1 S2 S2 S2 G2 Bottom VIN VIN GHSVIN VIN SWITCH NODE GND GND GND GLS 5 Q2 6 7 8 4 3 2 1 Q1 Power33 MOSFET Maximum Ratings TC = 25°C unless o

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