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FDMC8321LDC MOSFET

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Description

FDMC8321LDC N-Channel PowerTrench® MOSFET December 2014 FDMC8321LDC N-Channel Power Trench® MOSFET 40 V, 108 A, 2.5 mΩ .
This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench® process.

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Features

* Dual CoolTM Top Side Cooling PQFN package
* Max rDS(on) = 2.5 mΩ at VGS = 10 V, ID = 27 A
* Max rDS(on) = 4.1 mΩ at VGS = 4.5 V, ID = 21 A
* High performance technology for extremely low rDS(on)

Applications

* Primary DC-DC Switch
* Motor Bridge Switch
* Synchronous Rectifier Pin 1 G S S S Top Power 33 D DDD Bottom S S S G D D D D MOSFET Maximum Ratings TA = 25 °C unless otherwise noted Symbol VDS VGS ID Parameter Drain to Source Voltage Gate to Source Voltage Drai

FDMC8321LDC Distributors

📁 Related Datasheet

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📌 All Tags

FDMC8321LDC MOSFET Fairchild Semiconductor
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