MCD2926 (MC Devices)
18MHz-650MHz Dual Frequency Synthesizer
MCD2926 18MHz-650MHz Dual Frequency Synthesizer (Version 2.5)
MC Devices®
MCD2926 18MHz-650MHz Dual Frequency Synthesizer
General Description
The MC
(38 views)
MCDP2800 (MegaChips)
DisplayPort1.2a to HDMI2.0 Level Shifter/Protocol Converter
MCDP28x0 DisplayPort1.2a to HDMI2.0 Level Shifter/Protocol Converter
[LSPCON] Datasheet
Rev B
MegaChips’ Proprietary Information
MegaChips reserves th
(37 views)
MCD-725 (ETC)
PHOTO COUPLERS
(34 views)
MCD501-16io2 (IXYS)
Thyristor/Diode Modules
IXYS
Date: 29.09.2014 Data Sheet Issue: 3
Thyristor/Diode Modules M## 501
Absolute Maximum Ratings
VRRM VDRM [V]
1200 1400 1600 1800
MCC 501-12io2
(34 views)
10K3MCD1 (BetaTHERM)
Micro-BetaCHIP Thermistor Probe
BetaTHERM Sensors
Photo
Thermistor Configuration
3.18mm Nominal (0.125 )
Custom Lengths
3.18mm (0.125 )
0.457mm Dia. Typ. (0.018 )
38 AWG Solid N
(31 views)
PFAF200D108MCDTE (NEC)
New High Speed Decoupling Device Proadlizer
Vol.
08
Proadlizer PF/A Series
APPLICATION
• High speed and high power CPU and Gbps backplane decoupling • EMI solution for 10 MHz range or above •
(29 views)
UMA1H100MCD (Nichicon)
ALUMINUM ELECTROLYTIC CAPACITORS
ALUMINUM ELECTROLYTIC CAPACITORS
MA 5mmL, Standard, For General Purposes series
Standard series with 5mm height. Compliant to the RoHS directive (200
(28 views)
M5M4V16169DRT-10 (Mitsubishi)
16MCDRAM:16M(1M-WORD BY 16-BIT) CACHED DRAM WITH 16K (1024-WORD BY 16-BIT) SRAM
MITSUBISHI LSIs
M5M4V16169DTP/RT-7,-8,-10,-15
16MCDRAM:16M(1M-WORD BY 16-BIT) CACHED DRAM WITH 16K (1024-WORD BY 16-BIT) SRAM
Preliminary
This docume
(27 views)
PEH536MCD4270M (Kemet)
Snap-In Aluminum Electrolytic Capacitors
Snap-In Aluminum Electrolytic Capacitors
PEH536 Series, +105ºC
Overview
Applications
Typical applications for KEMET's PEH536 capacitor include switc
(27 views)
M5M4V16169DRT-15 (Mitsubishi)
16MCDRAM:16M(1M-WORD BY 16-BIT) CACHED DRAM WITH 16K (1024-WORD BY 16-BIT) SRAM
MITSUBISHI LSIs
M5M4V16169DTP/RT-7,-8,-10,-15
16MCDRAM:16M(1M-WORD BY 16-BIT) CACHED DRAM WITH 16K (1024-WORD BY 16-BIT) SRAM
Preliminary
This docume
(26 views)
M5M4V16169DRT-7 (Mitsubishi)
16MCDRAM:16M(1M-WORD BY 16-BIT) CACHED DRAM WITH 16K (1024-WORD BY 16-BIT) SRAM
MITSUBISHI LSIs
M5M4V16169DTP/RT-7,-8,-10,-15
16MCDRAM:16M(1M-WORD BY 16-BIT) CACHED DRAM WITH 16K (1024-WORD BY 16-BIT) SRAM
Preliminary
This docume
(26 views)
M5M4V16169DRT-8 (Mitsubishi)
16MCDRAM:16M(1M-WORD BY 16-BIT) CACHED DRAM WITH 16K (1024-WORD BY 16-BIT) SRAM
MITSUBISHI LSIs
M5M4V16169DTP/RT-7,-8,-10,-15
16MCDRAM:16M(1M-WORD BY 16-BIT) CACHED DRAM WITH 16K (1024-WORD BY 16-BIT) SRAM
Preliminary
This docume
(25 views)
MCD405 (Freescale)
P-Channel MOSFET
Freescale
P-Channel 32-V (D-S) MOSFET
These miniature surface mount MOSFETs utilize a high cell density trench process to provide low rDS(on) and to e
(25 views)
PFA1212200D108MCDC (NEC)
New High Speed Decoupling Device Proadlizer
Vol.
08
Proadlizer PF/A Series
APPLICATION
• High speed and high power CPU and Gbps backplane decoupling • EMI solution for 10 MHz range or above •
(24 views)
PEH536MCD4330M (Kemet)
Snap-In Aluminum Electrolytic Capacitors
Snap-In Aluminum Electrolytic Capacitors
PEH536 Series, +105ºC
Overview
Applications
Typical applications for KEMET's PEH536 capacitor include switc
(23 views)
MCD4184 (Freescale)
N-Channel MOSFET
Freescale
AOD4184/ MCD4184
N-Channel 40-V (D-S) MOSFET
Key Features: • Low rDS(on) trench technology • Low thermal impedance • Fast switching speed
(22 views)
100K6MCD1 (BetaTHERM)
Micro-BetaCHIP Thermistor Probe
BetaTHERM Sensors
Photo
Thermistor Configuration
3.18mm Nominal (0.125 )
Custom Lengths
3.18mm (0.125 )
0.457mm Dia. Typ. (0.018 )
38 AWG Solid N
(22 views)
MCD139B (Philips)
DVD Micro Theater Manual
DVD Micro Theater
Register your product and get support at
MCD139B
www.philips.com/welcome
User manual Manual de usuario Manual do Utilizador
http:
(21 views)
M38749MCD-XXXGP (Mitsubishi)
SINGLE-CHIP 8-BIT CMOS MICROCOMPUTER
(21 views)
MCD132-14io1 (IXYS)
Thyristor / Diode Module
Thyristor \ Diode Module
Phase leg
Part number
MCD132-14io1
3 1 5 42
MCD132-14io1
VRRM I TAV VT
= 2x 1400 V = 130 A = 1.08 V
Backside: isolated
F
(21 views)