| Part Number | Description | Manufacture |
|---|---|---|
|
|
Silicon NPN Power Transistor SYMBOL PARAMETER CONDITIONS V(BR)EBO Eollector-base breakdown Voltage IC= 200mA; IC= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= 5.0A; IB=1.25A VBE(sat) Base-Emitter Saturation Voltage IC= 5.0A; IB=1.25A ICBO Collector Cutoff Current |
 Inchange Semiconductor |
|
|
MD1803DFX ■ ■ ■ ■ ■ ■ ■ State-of-the-art technology: – Diffused collector “enhanced generation” More stable performance versus operating temperature variation Low base drive requirement Tighter hFE range at operating collector current Fully insulated power pa |
 STMicroelectronics |
|
|
High voltage NPN Power transistor ■ State-of-the-art technology: – Diffused collector “enhanced generation” ■ More stable performance versus operating temperature variation ■ Low base drive requirement ■ Tighter hFE range at operating collector current ■ Fully insulated power package |
 ST Microelectronics |
|
|
NPN Transistor pecified SYMBOL PARAMETER CONDITIONS V(BR)EBO Eollector-base breakdown Voltage IC= 700mA; IC= 0 VCE(sat)(1) Collector-Emitter Saturation Voltage IC= 5.0A; IB=1.25A VBE(sat)(1) Base-Emitter Saturation Voltage ICBO Collector Cutoff Current IC= |
 INCHANGE |
|
|
High voltage NPN Power transistor ■ State-of-the-art technology: – Diffused collector “enhanced generation” ■ Stable performance versus operating temperature variation ■ Low base drive requirement 3 ■ Tight hFE range at operating collector current ■ Fully insulated power package |
ST Microelectronics |
|
|
High voltage NPN Power transistor ■ ■ ■ ■ ■ ■ State-of-the-art technology: – Diffused collector “enhanced generation” Stable performance versus operating temperature variation Low base drive requirement Tight hFE range at operating collector current Fully insulated power package UL |
STMicroelectronics |
