MD1803DFX Overview
· High Voltage · Low base-drive requirements · Collector-Emitter Sustaining Voltage- : 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)EBO Eollector-base breakdown Voltage IC= 200mA; IC= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= 5.0A;.


