MF-111 Datasheet | Specifications & PDF Download

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High Power Switch with Integrated Bias Controller 0.5 - 7.2 GHz Features • Broadband Performance • Low Loss: TX = 0.35 dB @ 3.5 GHz RX = 0.4 dB @ 3.5

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Ka-Band High Power Terminated SPDT PIN Switch with Integrated Driver, 20 - 44 GHz MAMF-011146 Rev. V6 Features • Broadband Performance, 20 to 44 GHz

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RN1110MFV, RN1111MFV TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process)(Bias Resistor built-in Transistor) RN1110MFV, RN1111MFV Switching, I

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RN2110MFV, RN2111MFV TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process)(Bias Resistor built-in Transistor) RN2110MFV, RN2111MFV Switching, I

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MODULATORS QPSK COAXIAL CONNECTOR MODELS INPUT CARRIER FREQUENCY (MHz) INSERTION LOSS (dB) MAX AMPLITUDE UNBALANCE (dB) MAX PHASE UNBALANCE (Degrees)

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MF1117V-2 FOR DIGITAL MOBILE TELEPHONE, Rx MF1117V-2 FEATURES 1. SMD package insures small size, lightweight. 2. Adjustment free. 3. Low insertion lo

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MF1118V-2 FOR DIGITAL MOBILE TELEPHONE, Tx MF1118V-2 FEATURES 1. SMD package insures small size, lightweight. 2. Adjustment free. 3. Low insertion lo

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SCM1110MF High Voltage 3-Phase Motor Driver Features and Benefits ▪ Each half-bridge circuit consists of a pre-driver circuit that is completely inde

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RN1119MFV TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) (Bias Resistor built-in Transistor) RN1119MFV Switching Applications Inverter

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RN1110MFV, RN1111MFV TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process)(Bias Resistor built-in Transistor) RN1110MFV, RN1111MFV Switching, I

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Metal Film Fixed Resistor Specifications: Type Rated Power Max. Working Voltage Max. Overload Voltage Dielectric Withstanding Voltage Rated Ambi

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RN1112MFV, RN1113MFV TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process)(Bias Resistor built-in Transistor) RN1112MFV, RN1113MFV Switching, I

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RN1114MFV to RN1118MFV TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) (Bias Resistor built-in Transistor) RN1114MFV, RN1115MFV, RN1116MFV

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RN1112MFV, RN1113MFV TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process)(Bias Resistor built-in Transistor) RN1112MFV, RN1113MFV Switching, I

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RN1114MFV to RN1118MFV TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) (Bias Resistor built-in Transistor) RN1114MFV, RN1115MFV, RN1116MFV

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RN1114MFV to RN1118MFV TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) (Bias Resistor built-in Transistor) RN1114MFV, RN1115MFV, RN1116MFV

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SANYOU RELAYS Relays for advanced technology Miniature Power Relay version:V1.5 SMF- Series Features ● High contact capability： 16 switching capabi

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SANYOU RELAYS Relays for advanced technology Miniature Power Relay version:V1.5 SMF- Series Features ● High contact capability： 16 switching capabi

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