MF-113 Datasheet | Specifications & PDF Download

MOSFET – Power, Single P-Channel -60 V, 14 mW, -64 A NVMFS5113PL Features • Low RDS(on) to Minimize Conduction Losses • High Current Capability • Av

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Metal Film Fixed Resistor Specifications: Type Rated Power Max. Working Voltage Max. Overload Voltage Dielectric Withstanding Voltage Rated Ambi

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RN2112MFV, RN2113MFV TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process)(Bias Resistor built-in Transistor) RN2112MFV, RN2113MFV Switching, I

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RN1131MFV, RN1132MFV TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) (Bias Resistor built-in Transistor) RN1131MFV, RN1132MFV Switching

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Metal Film Fixed Resistor Specifications: Type Rated Power Max. Working Voltage Max. Overload Voltage Dielectric Withstanding Voltage Rated Ambi

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RN1131MFV, RN1132MFV TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) (Bias Resistor built-in Transistor) RN1131MFV, RN1132MFV Switching

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MODULATORS QPSK COAXIAL CONNECTOR MODELS INPUT CARRIER FREQUENCY (MHz) INSERTION LOSS (dB) MAX AMPLITUDE UNBALANCE (dB) MAX PHASE UNBALANCE (Degrees)

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RN1112MFV, RN1113MFV TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process)(Bias Resistor built-in Transistor) RN1112MFV, RN1113MFV Switching, I

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RN1130MFV TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) (Bias Resistor built-in Transistor) RN1130MFV Switching Applications Inverter

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