
MG120R080 - N-CHANNEL Enhancement Silicon Carbide MOSFET
N N-CHANNEL Enhancement Silicon Carbide MOSFET
R
MG120R080
MAIN CHARACTERISTICS
Package
ID VCE Rdson-typ ๏ผ@Vgs=18V๏ผ Qg-typ
28A 1200V 80Mโฆ
85nC
(7 views)