MG120R080 N-CHANNEL Enhancement Silicon Carbide MOSFET

JILIN SINO

Description

N N-CHANNEL Enhancement Silicon Carbide MOSFET R MG120R080 MAIN CHARACTERISTICS Package ID VCE Rdson-typ （@Vgs=18V） Qg-typ 28A 1200V 80MΩ 85nC .

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MG120R080 Datasheet Preview — Preview of MG120R080 PDF

Datasheet Specifications

Part number: MG120R080
Manufacturer: JILIN SINO
File Size: 785.61 KB
Datasheet: MG120R080-JILINSINO.pdf
Description: N-CHANNEL Enhancement Silicon Carbide MOSFET

Features

* High Blocking Voltage
* Low On-Resistance
* High Speed Switching with Low Capacitances
* Easy to Parallel and Simple to Drive
* Avalanche Ruggedness
* RoHS product TO-247 TO-247-4L ORDER MESSAGE Order codes - Halogen-Free-Tube MG120R080-GE-BR MG120R080-GH-BR ：202404A Ma

Applications

* Solar Inverters
* Switch Mode Power Supplies
* High Voltage DC/DC Converters
* Battery Chargers
* Motor Drives
* Pulsed Power applications

MG120R080 Distributors

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MG120R080 N-CHANNEL Enhancement Silicon Carbide MOSFET JILIN SINO

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