MG1200FXF1US51 Datasheet - Toshiba

MG1200FXF1US51 TOSHIBA GTR Module Silicon N-Channel IGBT

MG1200FXF1US51 Preliminary TOSHIBA GTR Module Silicon N-Channel IGBT MG1200FXF1US51 High Power Switching Applications Motor Control Applications High input impedance Enhancement mode Electrodes are isolated from case. Equivalent Circuit C G E E E E C C C Maximum Ratings (Ta = 25°C) Characteristics Collector-emitter voltage Gate-emitter voltage DC Collector current 1 ms Peak 1 cycle surge current 10 ms (half sine) Symbol VCES VGES IC ICP IFSM Tj Tstg VIsol ¾ Rating 3300 ±20.

MG1200FXF1US51 Datasheet (94.91 KB)