MG1200FXF1US51 Datasheet - Toshiba

MG1200FXF1US51, TOSHIBA GTR Module Silicon N-Channel IGBT

MG1200FXF1US51 Preliminary TOSHIBA GTR Module Silicon N-Channel IGBT MG1200FXF1US51 High Power Switching Applications Motor Control Applications

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Datasheet Details

Part number:

MG1200FXF1US51

Manufacturer:

Toshiba ↗

File Size:

94.91 KB

Description:

TOSHIBA GTR Module Silicon N-Channel IGBT

Applications

* Motor Control Applications
* High input impedance Enhancement mode Electrodes are isolated from case. Equivalent Circuit C G E E E E C C C Maximum Ratings (Ta = 25°C) Characteristics Collector-emitter voltage Gate-emitter voltage DC Collector current 1 ms Peak 1 cycle surge current

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MG1200FXF1US51 TOSHIBA GTR Module Silicon N-Channel IGBT Toshiba

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