MG1200FXF1US51
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Toshiba gtr module silicon n-channel igbt.
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MG1200V1US51 - TOSHIBA GTR MODULE SILICON N−CHANNEL IGBT
(Toshiba)
MG1200V1US51
TOSHIBA GTR MODULE SILICON N−CHANNEL IGBT
MG1200V1US51
HIGH POWER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS
FEATURES
l High Inp.
MG12032-01 - LCD
(BONA)
Standard LCD module
MG12032-01 OUTLINE DIMENSION
ISO 9001:2000 FM86067
Graphic Type
10K
Tolerance: ± 0.20mm, unless otherwise specified.
BLOCK DI.
MG120R040 - N-CHANNEL Enhancement Silicon Carbide MOSFET
(JILIN SINO)
.
MG120R080 - N-CHANNEL Enhancement Silicon Carbide MOSFET
(JILIN SINO)
N N-CHANNEL Enhancement Silicon Carbide MOSFET
R
MG120R080
MAIN CHARACTERISTICS
Package
ID VCE Rdson-typ （@Vgs=18V） Qg-typ
28A 1200V 80MΩ
85nC
.
MG120V2YS40 - N-Channel IGBT
(Toshiba)
TOSHIBA GTR Module Silicon N Channel IGBT
MG120V2YS40
High Power Switching Applications Motor Control Applications
MG120V2YS40
Unit: mm
l The electr.
MG12200D-BN2MM - IGBT
(Littelfuse)
Power Module 1200V 200A IGBT Module
MG12200D-BN2MM
RoHS ®
Features
• H igh short circuit capability, self limiting short circuit current
• IGBT3 .
MG12225WB-BN2MM - IGBT
(Littelfuse)
Power Module 1200V 225A IGBT Module
MG12225WB-BN2MM
RoHS
Features
• IGBT3 CHIP(Trench+Field Stop technology)
• Low saturation voltage and positiv.
MG12232-01 - LCD
(BONA)
Standard LCD module
MG12232-01 OUTLINE DIMENSION
ISO 9001:2000 FM86067
Character Type
Tolerance: ± 0.20mm, unless otherwise specified.
BLOCK DIAG.
MG12232-11 - LCD
(BONA)
Standard LCD module
MG12232-11 OUTLINE DIMENSION
ISO 9001:2000 FM86067
Graphic Type
BLOCK DIAGRAM
Tolerance: ± 0.20mm, unless otherwise specified.
MG12232-12 - LCD
(BONA)
Standard LCD module
MG12232-12 OUTLINE DIMENSION
ISO 9001:2000 FM86067
Graphic Type
BLOCK DIAGRAM
Tolerance: ± 0.20mm, unless otherwise specified.
